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PDF AOD7B65M3 Data sheet ( Hoja de datos )

Número de pieza AOD7B65M3
Descripción IGBT
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AOD7B65M3
650V, 7A Alpha IGBT TM
With soft and fast recovery anti-parallel diode
General Description
• Latest AlphaIGBT (α IGBT) technology
• 650V breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Low VCE(SAT) enables high efficiencies
• Low turn-off switching loss and softness
• Very good EMI behavior
• High short-circuit ruggedness
Applications
• Motor Drives
• Home appliance applications such as refrigerators
and washing machines
• Fan, Pumps, Vacuum Cleaner
• Other Hard Switching Applications
Product Summary
VCE
IC (TC=100°C)
VCE(sat) (TJ=25°C)
650V
7A
1.87V
Top View
TO-252
DPAK
Bottom View
C
C
C
E
G
AOD7B65M3
G
E
G
E
Orderable Part Number Package Type
Form
Minimum Order Quantity
AOD7B65M3
TO252
Tape & Reel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOD7B65M3
2500
Units
Collector-Emitter Voltage
V CE
650
V
Gate-Emitter Voltage
Continuous Collector TC=25°C
Current
TC=100°C
V GE
IC
±30
14
7
V
A
Pulsed Collector Current, Limited by TJmax
Turn off SOA, VCE 650V, Limited by TJmax
Continuous Diode TC=25°C
Forward Current
TC=100°C
I CM
I LM
IF
21
21
10
5
A
A
A
Diode Pulsed Current, Limited by TJmax
I FM
21
A
Short circuit withstanding time 1)
VGE = 15V, VCC 400V, TJ 150°C
t SC
5
µs
Power Dissipation
TC=25°C
TC=100°C
PD
69
28
W
Junction and Storage Temperature Range
T J , T STG
-55 to 150
°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300 °C
Thermal Characteristics
Parameter
Symbol
AOD7B65M3
Units
Maximum Junction-to-Ambient
R θ JA
Maximum IGBT Junction-to-Case
R θ JC
Maximum Diode Junction-to-Case
R θ JC
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
55
1.8
5.5
°C/W
°C/W
°C/W
Rev.1.0: February 2016
www.aosmd.com
Page 1 of 9

1 page




AOD7B65M3 pdf
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
1000
Td(off)
Tf
Td(on)
Tr
10000
1000
Td(off)
Tf
Td(on)
Tr
100 100
10 10
1
3
10000
1000
5 7 9 11 13
IC (A)
Figure 13: Switching Time vs. IC
(Tj=150°C,VGE=15V,VCE=400V,Rg=43)
15
Td(off)
Tf
Td(on)
Tr
100
10
1
25
50 75 100 125
TJ (°C)
Figure 15: Switching Time vs.Tj
(VGE=15V,VCE=400V,IC=7A,Rg=43)
150
1
0 100 200 300 400 500
Rg ()
Figure 14: Switching Time vs. Rg
(Tj=150°C,VGE=15V,VCE=400V,IC=7A)
7
6
5
4
3
2
1
0 25 50 75 100 125 150
TJ (°C)
Figure 16: VGE(TH) vs. Tj
Rev.1.0: February 2016
www.aosmd.com
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