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2N7002KW の電気的特性と機能

2N7002KWのメーカーはPan Jit Internationalです、この部品の機能は「60V N-Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 2N7002KW
部品説明 60V N-Channel Enhancement Mode MOSFET
メーカ Pan Jit International
ロゴ Pan Jit International ロゴ 




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2N7002KW Datasheet, 2N7002KW PDF,ピン配置, 機能
2N7002KW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3
• RDS(ON), VGS@4.5V,IDS@200mA=4
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Component are in compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: SOT-323 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : K72
D
3
12
GS
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Drain-Source Voltage
PARAMETER
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
TA =25OC
TA =75OC
Junction-to Ambient Thermal Resistance(PCB mounted)2
S ym b o l
VDS
VGS
ID
ID M
PD
TJ,TS TG
RθJ A
Limit
60
+20
115
800
200
120
-55 to + 150
625
Uni ts
V
V
mA
mA
mW
OC
O C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JAN.11.2007
PAGE . 1

1 Page





2N7002KW pdf, ピン配列
2N7002KW
Typical Characteristics Curves (TA=25OC,unless otherwise noted)
1.2
VGS= 10V ~ 6.0V
1
0.8
0.6
0.4
0.2
5.0V
4.0V
3.0V
0
0 12 34 5
VDS - Drain-to-Source Voltage (V)
Fig. 1F-TIYGP.1IC-ALOFuOtpRuWtARCDhCaHraAcRteArCisTtEicRISTIC
5
4
3
2 VGS=4.5V
1 VGS=10V
0
0 0.2 0.4 0.6 0.8 1
ID - Drain Current (A)
FIG.3- On Resistance vs Drain Current
1.8
VGS=10V
1.6 ID=500mA
1.4
1.2
1
0.8
0.6
-50
-25 0 25 50 75 100 125
TJ - Junction Temperature (oC)
150
FIG.5- On Resistance vs Junction Temperature
1.2
VDS=10V
1
0.8
0.6
0.4
TJ=25OC
0.2
0
012 3456
VGS - Gate-to-Source Voltage (V)
FIG.2- Transfer Characteristic
5
4
3
ID=500mA
2
ID=200mA
1
0
2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
FIG.4- On Resistance vs Gate to Source Voltage
STAD-JAN.11.2007
PAGE . 3


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共有リンク

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