Datasheet 2N7002KW Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2N7002KW	N-Channel Enhancement Mode Field Effect Transistor 2N7002KW — N-Channel Enhancement Mode Field Effect Transistor May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface	Fairchild Semiconductor	transistor
2	2N7002KW	N-Ch Small Signal MOSFET Elektronische Bauelemente 2N7002KW 115mA , 60V, RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  RDS(ON), VGS@10V, IDS@500mA=3  RDS(ON), [email protected], IDS@200mA=4  Advanced Trench Process Techn	SeCoS	mosfet
3	2N7002KW	60V N-Channel Enhancement Mode MOSFET 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially	Pan Jit International	mosfet
4	2N7002KW	N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002KW V(BR)DSS 9 N-Channel MOSFET RDS(on)MAX ȍ#9 ȍ#9 ID P$ SOT-323 3 1. GATE 2. SOURCE 1 3. DRAIN 2 FEATURE z High density cell design for Low RDS(on) z Voltage controlled small sig	JCET	mosfet
5	2N7002KW	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N7002KW 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UTC 2N7002KW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applicatio	Unisonic Technologies	mosfet

2N7 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2N70	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N70 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. T	Unisonic Technologies	mosfet
2	2N70-M	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characterist	Unisonic Technologies	mosfet
3	2N7000	N-CHANNEL MOSFET 2N7000 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-92 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-92 Plastic Package. 特征 / Features 灵敏的控制级触发电流和很低的维持电流。 Sensitive gate trigger current and Low Holding current. 用途 / Applic	BLUE ROCKET ELECTRONICS	mosfet
4	2N7000	Small Signal MOSFET 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Drain Gate Source 1. Source 2.Gate 3.Drain TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain Source Voltage Drain-Gate Voltage (RGS = 1 MΩ) Gate-source Voltage Drain Current Continuous Non-repetitive ( tp ≤ 50 �	SEMTECH	mosfet
5	2N7000	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Vol	KEC	transistor
6	2N7000	Small Signal MOSFET WEITRON Small Signal MOSFET N-Channel 3 DRAIN Features: Low On-Resistance : 5Ω Low Input Capacitance: 60PF Low Out put Capacitance : 25PF Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns 2 GATE 1 SOURCE 2N7000 TO-92 1. SOURCE 2. GATE 3. DRAIN 1 2 3 Maximum Ratings (TA=25 C Unless	WEITRON	mosfet
7	2N7000	N-Channel Enhancement Mode Power MosFET Elektronische Bauelemente 2N7000 200mA,60V,RDS(ON) 6 N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. D SEATING PLANE b1 TO-92 E S1	SeCoS	mosfet

Esta página es del resultado de búsqueda del 2N7002KW. Si pulsa el resultado de búsqueda de 2N7002KW se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap