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PDF AP6900GSM Data sheet ( Hoja de datos )
| Número de pieza | AP6900GSM | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP6900GSM
Pb Free Plating Product
DUAL N-CHANNEL MOSFET WITH
SCHOTTKY DIODE
▼ Simple Drive Requirement
▼ DC-DC Converter Suitable
▼ Fast Switching Performance
Description
S1/D2
S1/D2
S1/D2
G1
SO-8
S2/A
G2
D1
D1
CH-1
CH-2
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
D1
G1
N-Channel 1
MOSFET
30V
30mΩ
5.7A
30V
22mΩ
9.8A
S1/D2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
G2
N-Channel 2
MOSFET
S2/A
Schottky Diode
Rating
Channel-1 Channel-2
30 30
±20 ±20
5.7 9.8
4.6 7.8
20 30
1.4 2.2
0.01 0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-a (CH-1)
Rthj-a (CH-2)
Thermal Resistance Junction-ambient3
Thermal Resistance Junction-ambient3
Value
Typ. Max.
70 90
42 55
Units
℃/W
℃/W
Data and specifications subject to change without notice
201121063-1/9
1 page  
AP6900GSM
Channel-1
40
T A = 25 o C
30
20
10V
7.0V
5.0V
4.5V
10
V G =3.0V
0
012345
V DS , Drain-to-Source Voltage (V)
6
Fig 1. Typical Output Characteristics
38
34 I D = 3 A
T A =25 o C
30
26
22
18
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
7
6
5
4
T j =150 o C
T j =25 o C
3
2
1
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
40
TA=150oC
10V
7.0V
5.0V
30
4.5V
20
10
V G =3.0V
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
ID=5A
1.4 V G =10V
1.2
1.0
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
1.6
1.3
1.0
0.7
0.4
-50 0 50 100
T j ,Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AP6900GSM.PDF ] | |
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