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8N60AF の電気的特性と機能

8N60AFのメーカーはnELLです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 8N60AF
部品説明 N-Channel Power MOSFET / Transistor
メーカ nELL
ロゴ nELL ロゴ 




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8N60AF Datasheet, 8N60AF PDF,ピン配置, 機能
SEMICONDUCTOR
8N60 Series RRooHHSS
Nell High Power Products
DESCRIPTION
N-Channel Power MOSFET
(8A, 600Volts)
The Nell 8N60 is a three-terminal silicon
device with current conduction capability of 8A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 600V ,and max.
threshold voltage of 4 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
RDS(ON) = 1.2Ω @ VGS = 10V
Ultra low gate charge(36nC max.)
Low reverse transfer capacitance
(CRSS = 12pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
ID (A)
8
VDSS (V)
600
RDS(ON) (Ω)
1.2 @ VGS = 10V
QG(nC) max.
36
D
GDS
TO-220AB
(8N60A)
D
G
S
TO-263(D2PAK)
(8N60H)
GDS
TO-220F
(8N60AF)
D (Drain)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
Drain to Source voltage
Drain to Gate voltage
TJ=25°C to 150°C
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=8A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
IAS=8A, L=7.1mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 8A, VDD = 50V, L = 7.1mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 7.5A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ=25°C.
TO-220AB/TO-263
TC=25°C
TO-220F
1.6mm from case
www.nellsemi.com
Page 1 of 7
VALUE
600
600
±30
8
5
32
8
14.7
230
4.5
150
48
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
ºC
lbf.in (N.m)

1 Page





8N60AF pdf, ピン配列
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
Current rating, ID
8 = 8A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
H = TO-263(D²PAK)
8N60 Series RRooHHSS
Nell High Power Products
8 N 60 A
Fig.1 On-State characteristics
100
10
1
VGS
Top: 15V
10V
8V
7V
6.5V
6V
5.5V
Bottorm: 5 V
5V
0.1
0.1
*Notes:
1.250µs Pulse test
2.Tc=25°C
1 10
Drain-to-Source voltage, VDS(V)
Fig.2 Transfer characteristics
10
150°C
1
25°C
0.1
2
*Notes:
1.VDS=40V
2.250µs Pulse test
46 8
Gate-Source voltage, VGS (V)
10
Fig.3 On-resistance variation vs. drain
current and gate voltage
6
5
4
3 VGS=10V
2
VGS=20V
1
*Note:TJ=25°C
0
0 5 10 15 20
Drain current, ID (A)
Fig.4 Body diode forward voltage vs.
source current
10
150°C
25°C
1
*Notes:
1.VGS=0V
2.250μs Pulse test
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-drain voltage, VSD(V)
www.nellsemi.com
Page 3 of 7


3Pages


8N60AF 電子部品, 半導体
SEMICONDUCTOR
Fig.3A Gate charge test circuit
8N60 Series RRooHHSS
Nell High Power Products
Fig.3B Gate charge waveform
Same Type as
12V 50kΩ D.U.T.
0.2µF
0.3µF
VDS
VGS
3mA
D.U.T.
VGS
10V
QGS
QG
QGD
Charge
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
10V
RG
tp
VDS
L
D.U.T.
VDD
BVDSS
lAS
VDD
lD(t)
tp
VDS(t)
Time
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
4.06 (0.160)
3.56 (0.140)
PIN
123
16.13 (0.635)
15.87 (0.625)
3.68 (0.145)
3.43 (0.135)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
14.22 (0.560)
13.46 (0.530)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
15.32 (0.603)
14.55 (0.573)
2.79 (0.110)
2.54 (0.100)
www.nellsemi.com
Page 6 of 7

6 Page



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共有リンク

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部品番号部品説明メーカ
8N60A

N-Channel Power MOSFET / Transistor

nELL
nELL
8N60AF

N-Channel Power MOSFET / Transistor

nELL
nELL


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