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12N60A の電気的特性と機能

12N60AのメーカーはnELLです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 12N60A
部品説明 N-Channel Power MOSFET / Transistor
メーカ nELL
ロゴ nELL ロゴ 




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12N60A Datasheet, 12N60A PDF,ピン配置, 機能
SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
12A, 600Volts
DESCRIPTION
The Nell 12N60 is a three-terminal silicon
device with current conduction capability of
12A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies. DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 0.8Ω @ VGS = 10V
Ultra low gate charge(54nC max.)
Low reverse transfer capacitance
(CRSS = 25pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
12
600
0.8 @ VGS = 10V
54
D
GDS
TO-220AB
(12N60A)
GDS
TO-220F
(12N60AF)
D (Drain)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
TC=25°C
TC=100°C
lAR=12A,RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy (Note 2)
lAS=12A, L = 10mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
TC=25°C
TO-220AB
TO-220F
TJ
TSTG
Operation junction temperature
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS=12A, VDD=50V, L= 10mH, RGS=25Ω, starting TJ = 25 °C.
3.ISD ≤ 12A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ = 25°C.
www.nellsemi.com
Page 1 of 7
VALUE
600
600
±30
12
7.4
48
12
24
790
4.5
225
51
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
ºC
lbf.in (N.m)

1 Page





12N60A pdf, ピン配列
SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 12A, VGS = 0V
1.4 V
IS(ISD)
Continuous source to drain current
ISM Pulsed source current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
G
(Gate)
12
A
48
trr Reverse recovery time
Qrr Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
ISD = 12A, VGS = 0V,
dIF/dt = 100A/µs
S (Source)
380 ns
3.5 μC
ORDERING INFORMATION SCHEME
Current rating, ID
12 = 12A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
12 N 60 A
TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* lSD controlled by pulse period
* D.U.T.-Device under test
VDD
VGS
(Driver)
lSD
(D.U.T)
VDS
(D.U.T)
P.W.
Period
D= P.W.
Period
VGS=10V
lFM, Body Diode forward current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
www.nellsemi.com
Page 3 of 7


3Pages


12N60A 電子部品, 半導体
SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
Fig.7 Maximum safe operating area
102 Operation in This Area is Limited by RDS(ON)
101
100
10-1
Note:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
10-2
100
101
100µs
1ms
10ms
100ms
DC
102 103
Drain-to-Source voltage, VDS (V)
Fig.8 Transient thermal response curve
100
10-1
D = 0.5
0.2
0.1
0.05
0.02
0.01
10-2
(Single Pulse)
Thermal response, Rth(j-c)
10-5
10-4
10-3
10-2
10-1
Notes:
1.Rth(j-c)(t)=0.56W Max.
2.Duty factor, D=t1/t2
3.TJM-TC=PDM×Rth(j-c)(t)
PDM
t
T
10-0
101
Rectangular Pulse Duration, t1 (sec)
www.nellsemi.com
Page 6 of 7

6 Page



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共有リンク

Link :


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12N60

N-Channel Power MOSFET / Transistor

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