Datasheet 12N60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	12N60	N-Channel Power MOSFET, Transistor SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. thre	nELL	mosfet
2	12N60	N-CHANNEL MOSFET 12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE  12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 12N60 ITO-220AB 12N60F TO-263 12N60B TO-262 12N60H Absolute Maximum Ratings(TC=25	CHONGQING PINGYANG	mosfet
3	12N60	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive	Inchange Semiconductor	mosfet
4	12N60	600/650 Volts N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N60 12 Amps, 600/650 Volts N-CHANNEL MOSFET Power MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These dev	Unisonic Technologies	mosfet
5	12N60A	N-Channel Power MOSFET, Transistor SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. thre	nELL	mosfet

12N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	12N035	N-Channel Field Effect Transistor Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor 12N035 Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other b	BL	transistor
2	12N06Z	12A 60V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N06Z 12A, 60V N-CHAN NEL POWER MOSFET DESCRIPTION 1 Power MOSFET The U TC 12N 06Z is an N-c hannel enh ancement mode Po wer MOSFET using UT C’ s adva nced te chnology to prov ide customers with a mi nimum on-state res istance, h igh s witching sp eed and low g	UNISONIC TECHNOLOGIES	mosfet
3	12N10	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N10 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and le	Unisonic Technologies	mosfet
4	12N10P	N-CHANNEL MOSFET 12N10P 12 Amps,100 Volts N-CHANNEL Power MOSFET FEATURE  12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATION  High Frequency Piont-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA 	CHONGQING PINGYANG	mosfet
5	12N18	N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 12N18 ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 180V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·	Inchange Semiconductor	mosfet
6	12N20	N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 12N20 ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·	Inchange Semiconductor	mosfet
7	12N25	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N25 12A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N25 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance a	Unisonic Technologies	mosfet

Esta página es del resultado de búsqueda del 12N60. Si pulsa el resultado de búsqueda de 12N60 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap