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12N10P の電気的特性と機能

12N10PのメーカーはCHONGQING PINGYANGです、この部品の機能は「N-CHANNEL MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 12N10P
部品説明 N-CHANNEL MOSFET
メーカ CHONGQING PINGYANG
ロゴ CHONGQING PINGYANG ロゴ 




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12N10P Datasheet, 12N10P PDF,ピン配置, 機能
12N10P
12 Amps,100 Volts N-CHANNEL Power MOSFET
FEATURE
12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATION
High Frequency Piont-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
LCD/LED back light
GENERAL DESCRIPTION
SOP8L PIN CONFIGURATION
The 12N10P is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and
gate charge for most of the synchronous buck converter applications.
The 12N10P meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings(TC=25,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Channel Temperature
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAS
dv/dt
TJ,TSTG
TCH
TL
12N10P
100
±20
12
48
36
12
5.5
-55 to +150
150
260
UNIT
V
A
mJ
A
V/ns
Thermal Characteristics
Parameter
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
TC=25
Symbol
Rth(ch-c)
Rth(ch-a)
PD
MAX
18
72
3.6
Units
/W
/W
W

1 Page





12N10P pdf, ピン配列
RATINGAND CHARACTERISTIC CURVES


3Pages


12N10P 電子部品, 半導体
Operation in this Area
100 Limited by RDS(on)
IDM = L im ited
10
1
Limited by RDS(on)
1ms
10ms
0.1 TC=25
TJ=150
Single Pulse
0.01
0.1 1
BVDSS Limited
10
VDS,Drain-to-Source Voltage(V)
DC
100
50
40
30
20
10
0
25 50
75 100 125 150
TCH , Channel Temperature(Initial) ()
1
Duty Cycle = 0.5
100
Common Source
Tc=25
Pulse Test
10
VGS =10V
1
0.1
5
1 10
ID, Drain Current(V)
100
4
3
2
Common Source
1 VDS=10V
ID=250uA
Pulse Test
0
-80 -40 0 40 80 120
TC, Case Temperature()
140
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
0.001
0.01 0.1
Pulse Time(s)
1
10

6 Page



ページ 合計 : 7 ページ
 
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[ 12N10P データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
12N10

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
12N10P

N-CHANNEL MOSFET

CHONGQING PINGYANG
CHONGQING PINGYANG


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