|
|
G30FPのメーカーはGETE ELECTRONICSです、この部品の機能は「HIGH VOLTAGE DIODES」です。 |
部品番号 | G30FP |
| |
部品説明 | HIGH VOLTAGE DIODES | ||
メーカ | GETE ELECTRONICS | ||
ロゴ | |||
このページの下部にプレビューとG30FPダウンロード(pdfファイル)リンクがあります。 Total 1 pages
HVGT
G30FP
30kV 10mA HIGH VOLTAGE DIODES
G30FP is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Features
High speed switching
High Current
High surge resisitivity for CRT discharge
High reliability design
High Voltage
Applications
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Outline Drawings : mm
Lot No.
Cathode Mark
o 3.0
o 0.6
27 min.
12 27 min.
DO-312
Cathode Mark
Type
Mark
G30FP
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
V RRM
Average Output Current
IO Ta=25°C,Resistive Load
Suege Current
I FSM
Junction Temperature
Tj
Allowable Operation Case Temperature
Storage Temperature
Tc
Tstg
G30FP
30
10
0.8
125
120
-40 to +125
Units
kV
mA
A peak
°C
°C
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF at 25°C,IF =IF(AV)
Maximum Reverse Current
IR1 at 25°C,VR =VRRM
IR2 at 100°C,VR =VRRM
Maximum Reverse Recovery Time
Trr at 25°C
G30FP
55
2.0
5.0
100
Units
V
uA
uA
nS
Junction Capacitance
Cj at 25°C,VR=0V,f=1MHz
--
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com E-mail:[email protected]
2015
1 Page | |||
ページ | 合計 : 1 ページ | ||
|
PDF ダウンロード | [ G30FP データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
G30F | NV/ G-Low Current High Voltage Rectifiers | HV Component |
G30FG | Diode (spec sheet) | American Microsemiconductor |
G30FP | HIGH VOLTAGE DIODES | GETE ELECTRONICS |
G30FS | Diode (spec sheet) | American Microsemiconductor |