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PDF MRF8S9102NR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF8S9102NR3 | |
| Descripción | RF Power Field Effect Transistor | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 865 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD Output PAR ACPR
(%)
(dB)
(dBc)
920 MHz
940 MHz
960 MHz
23.1
23.1
22.8
36.4
36.4
36.6
6.3 --35.5
6.2 --36.1
6.1 --35.8
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ≃ 100 Watts CW
880 MHz
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD Output PAR ACPR
(%)
(dB)
(dBc)
865 MHz
880 MHz
895 MHz
22.9
23.0
22.8
35.4
35.5
35.6
6.4 --34.7
6.2 --35.1
6.0 --35.7
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Document Number: MRF8S9102N
Rev. 0, 2/2011
MRF8S9102NR3
865--960 MHz, 28 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 2021--03, STYLE 1
OM--780--2
PLASTIC
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S9102NR3
1
1 page  
TYPICAL CHARACTERISTICS
27
26
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 750 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
25
40
38
36
24
23 ηD
Gps
34
32
22
Input Signal PAR = 7.5 dB
--36
21
@ 0.01% Probability on CCDF
--36.5
20 --37
19
PARC
--37.5
18 ACPR
17
--38
IRL --38.5
820 840 860 880 900 920 940 960 980
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 28 Watts Avg.
0
--5
--10
--15
--20
--25
--10
VDD = 28 Vdc, Pout = 82 W (PEP), IDQ = 750 mA
--20
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
IM3--U
--30
IM3--L
--40
IM5--U
--50 IM5--L
IM7--L
IM7--U
--60
1
10 100
TWO--TONE SPACING (MHz)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
24
23.5
2 VWD--DC=DM28AV, 3d.c8,4IDMQH=z7C5h0amnnAe,lfB=a9n4d0wiMdtHh,z,InSpiuntgSlei-g-Cnaalrrier
1 PAR = 7.5 dB @ 0.01% Probability on CCDF
60
ηD
50
--20
--25
23 0
ACPR 40
--30
22.5 --1
30 --35
22 --2 --1 dB = 25 W
Gps
--3 dB = 48 W
20
--40
21.5 --3
--2 dB = 35 W
10 --45
21 --4
PARC
0
--50
10 20 30 40 50 60
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
--0.5
--0.8
--1.1
--1.4
--1.7
--2
RF Device Data
Freescale Semiconductor
MRF8S9102NR3
5
5 Page 
VDD = 28 Vdc, IDQ = 750 mA, Pout = 28 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
820 0.95 -- j1.97 3.44 -- j2.01
840 1.02 -- j1.88 3.44 -- j1.87
860 1.09 -- j1.83 3.48 -- j1.73
880 1.10 -- j1.74 3.53 -- j1.60
900 1.13 -- j1.74 3.63 -- j1.65
920 1.18 -- j1.71 3.73 -- j1.51
940 1.12 -- j1.75 3.81 -- j1.55
960 1.06 -- j1.72 3.88 -- j1.60
980 1.02 -- j1.71 3.98 -- j1.71
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z source
Z load
Figure 15. Series Equivalent Source and Load Impedance — 865--895 MHz
RF Device Data
Freescale Semiconductor
MRF8S9102NR3
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MRF8S9102NR3.PDF ] | |
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