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WCR4C60 の電気的特性と機能

WCR4C60のメーカーはWinsemiです、この部品の機能は「Silicon Controlled Rectifiers」です。


製品の詳細 ( Datasheet PDF )

部品番号 WCR4C60
部品説明 Silicon Controlled Rectifiers
メーカ Winsemi
ロゴ Winsemi ロゴ 




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WCR4C60 Datasheet, WCR4C60 PDF,ピン配置, 機能
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ ITM)
Isolation Voltage(VISO=1500V AC)
WCR4C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM
IT(AV)
IT(RMS)
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current(180°
Conduction Angle)
R.M.S On-State Current(180° Conduction
Angle)
Condition
Ti =60 °C
Tamb=25 °C
Ti =60 °C
Tamb=25 °C
ITSM Surge On-State Current
I2t I2t for Fusing
1/2 Cycle, 60Hz, Sine
WaveNon-Repetitive
t =10ms
di/dt Critical rate of rise of on-state current
PGM Forward Peak Gate Power Dissipation
F=60Hz,Tj=125 °C
PG(AV) Forward Average Gate Power Dissipation Tj=125 °C
IFGM
VISO
TJ
TSTG
Forward Peak Gate Current
Isolation Breakdown voltage(R.M..S)
Operating Junction Temperature
Storage Temperature
A,C.1minute
Ratings
600
1.35
0.9
4
1.35
Units
V
A
A
33 A
4.5
50
0.5
0.2
1.2A
1500
-40~125 °C
-40~150 °C
A2s
A/
W
W
A
V
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance Junction to Case(DC)
RθJA Thermal Resistance Junction to Ambient(DC)
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Value
15
100
Units
/W
/W

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WCR4C60 pdf, ピン配列
WCR4C60
Fig.1Average and D.C.on-state current versusrsus Fig. 2Maximum average power dissipation
ambient temperature (device mounted on FR4 versus average on-state current
with recommended pad layout)
Fig. 3 Relative variation of gate trigger current
And holding current versus junction temperature
Fig. 4Surge peak on-state current versus
Number of cycles.
Fig.5Relative variation of dV/dt immunity
versus gate-cathode resistance(typical
values)
Fig.6 Relative Variation of dV/dt immunity
versus gate-cathode capacitance (typical
values)
3/5
Steady, keep you advance


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部品番号部品説明メーカ
WCR4C60

Silicon Controlled Rectifiers

Winsemi
Winsemi


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