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WCR470N60TF の電気的特性と機能

WCR470N60TFのメーカーはWill Semiconductorです、この部品の機能は「600V N-Channel Super Junction MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 WCR470N60TF
部品説明 600V N-Channel Super Junction MOSFET
メーカ Will Semiconductor
ロゴ Will Semiconductor ロゴ 




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WCR470N60TF Datasheet, WCR470N60TF PDF,ピン配置, 機能
WCR470N60T/WCR470N60TF
WCR470N60T/WCR470N60TF
600V N-Channel Super Junction MOSFET
Description
The WCR470N60T/WCR470N60TF series is new
generation of high voltage MOSFET family that is utilizing
an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance,
and withstand extreme dv/dt rate and higher avalanche
energy. This device is suitable for various AC/DC power
conversion in switching mode operation for higher
efficiency.
Features
650V@TJ=150°C
Typ.RDS(on)=0.42
Low gate charge(typ. Qg= 12.6nC)
100% avalanche tested
100% Rg tested
Order Information
Device
Package
Marking
Units/Tube
WCR470N60T-3/T
TO-220
WCR470N60TYYWW
50
WCR470N60TF-3/T TO-220F WCR470N60TFYYWW
50
WCR
470N60
TFYYWW
WCR
470N60
TYYWW
Note 1: WCR470N60T=Device code ; YY=Year ;WW=Week (A~z);
Note 2: WCR470N60TF=Device code ; YY=Year ;WW=Week (A~z);
TO-220F
TO-220
Absolution Maximum Ratings TA=250C unless otherwise noted
Parameter
Symbol
WCR470N60T
WCR470N60TF
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
600
±30
Continuous Drain Current A TC=25°C
TC=100°C
Pulsed Drain Current B
Single Pulsed Avalanche Energy C
Avalanche Current B
Repetitive Avalanche Energy B
ID
IDM
EAS
IAR
EAR
9.4
5.9
25
120
2
0.28
Power Dissipation
TC=25°C
Derate above 25°C
PD
73.5
0.58
29.8
0.24
Operating and Storage Temperature Range TJ,TSTG
-55~150
Lead Temperature
Thermal Resistance Ratings
TL
260
Maximum Junction-to-Ambient
RθJA
60
80
Maximum Junction-to-Case
RθJC
1.7
4.2
Unit
V
A
A
mJ
A
mJ
W
W/°C
°C
°C
°C/W
Will Semiconductor Ltd. 1 Jan, 2016 - Rev.0.9

1 Page





WCR470N60TF pdf, ピン配列
WCR470N60T/WCR470N60TF
Typical Characteristics (TA=25oC, unless otherwise noted)
28
V =20V
DS
21 10
VGS=10V
14 1
-55oC
125oC
7
V =6V
GS
VGS=5V 5.5V
0.1
25oC
0
0 5 10 15 20
VDS-Drain-to-Source Voltage(V)
Output characteristics
1.0
0.8 VGS=6V
0.01
2
468
VGS-Gate-to-Source Voltage(V)
Transfer characteristics
2.5
V =10V
GS
ID=5A
2.0
10
0.6
V =10V
GS
1.5
0.4 1.0
0.2
0
4 8 12 16
IDS-Drain-to-Source Current(A)
20
On-Resistance vs. Drain current
1.15
I =250uA
D
1.10
1.05
1.00
0.95
0.90
-50
0
50 100 150
T (oC)
J
Breakdown Voltage vs. Junction temperature
0.5
-50
0 50 100
Temperature(oC)
150
On-Resistance vs. Junction temperature
1.2 ID=250uA
1.0
0.8
0.6
-50 0 50 100 150
T (oC)
J
Threshold voltage vs. Junction temperature
Will Semiconductor Ltd. 3 Jan, 2016 - Rev.1.0


3Pages


WCR470N60TF 電子部品, 半導体
Package outline dimensions
TO-220
WCR470N60T/WCR470N60TF
TO-220F
Will Semiconductor Ltd. 6 Jan, 2016 - Rev.1.0

6 Page



ページ 合計 : 6 ページ
 
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部品番号部品説明メーカ
WCR470N60T

600V N-Channel Super Junction MOSFET

Will Semiconductor
Will Semiconductor
WCR470N60TF

600V N-Channel Super Junction MOSFET

Will Semiconductor
Will Semiconductor


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