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PDF MRF8S21140HSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF8S21140HSR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | NXP Semiconductors | |
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Freescale Semiconductor
Technical Data
Document Number: MRF8S21140H
Rev. 0, 5/2010
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
970 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
hD Output PAR ACPR
(%)
(dB)
(dBc)
MRF8S21140HR3
MRF8S21140HSR3
2110-2170 MHz, 34 W AVG., 28 V
W-CDMA, LTE
LATERAL N-CHANNEL
RF POWER MOSFETs
2110 MHz
2140 MHz
2170 MHz
17.7 32.1
17.9 31.7
18.1 31.7
6.2 -37.0
6.4 -37.5
6.4 -37.5
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 188 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ] 126 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465-06, STYLE 1
NI-780
MRF8S21140HR3
CASE 465A-06, STYLE 1
NI-780S
MRF8S21140HSR3
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (2,3)
CW Operation @ TC = 25°C
Derate above 25°C
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
CW
Value
-0.5, +65
-6.0, +10
32, +0
-65 to +150
150
225
168
0.86
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 75°C, 34 W CW, 28 Vdc, IDQ = 970 mA, 2140 MHz
Case Temperature 80°C, 150 W CW(1), 28 Vdc, IDQ = 970 mA, 2140 MHz
RθJC
0.47
0.42
°C/W
ăĂ1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
Ăă2. Continuous use at maximum temperature will affect MTTF.
Ăă3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Ăă4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S21140HR3 MRF8S21140HSR3
1
1 page  
TYPICAL CHARACTERISTICS
20
19.5
VDD = 28 Vdc, Pout = 34 W (Avg.), IDQ = 970 mA
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
19
18.5 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
18
40
36
ηD
32
28
Gps 24
17.5 -20
17 PARC -24
16.5 -28
IRL
16 -32
15.5
ACPR
-36
15 -40
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 2. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 34 Watts Avg.
0
-6
-12
-18
-24
-30
-1 0
VDD = 28 Vdc, Pout = 55 W (PEP), IDQ = 970 mA
Two-Tone Measurements
-2 0 (f1 + f2)/2 = Center Frequency of 2140 MHz
IM3-U
-3 0
IM3-L
IM5-U
-4 0
IM5-L
-5 0 IM7-L
-60
1
IM7-U
10
100
TWO-T ONE SPACING (MHz)
Figure 3. Intermodulation Distortion Products
versus Two-T one Spacing
19 1
57 -20
VDD = 28 Vdc, IDQ = 970 mA, f = 2140 MHz
ACPR
Single-Carrier W-CDMA
18 0
51 -25
-1 dB = 32 W
17 -1
ηD
45
-30
16 -2
15 -3
-2 dB = 44 W
-3 dB = 60 W
39
Gps
33
-35
-40
14 -4 3.84 MHz Channel Bandwidth
27 -45
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
13 -5
PARC
21
-50
20 40 60 80 100 120
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
0
-1
-2
-3
-4
-5
RF Device Data
Freescale Semiconductor
MRF8S21140HR3 MRF8S21140HSR3
5
5 Page 
RF Device Data
Freescale Semiconductor
MRF8S21140HR3 MRF8S21140HSR3
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet MRF8S21140HSR3.PDF ] | |
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