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IPAW60R380CE の電気的特性と機能

IPAW60R380CEのメーカーはInfineonです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IPAW60R380CE
部品説明 MOSFET ( Transistor )
メーカ Infineon
ロゴ Infineon ロゴ 




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IPAW60R380CE Datasheet, IPAW60R380CE PDF,ピン配置, 機能
IPAW60R380CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
•Widedistanceof4.25mmbetweentheleads
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
PG-TO220FullPAKWideCreepage
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
380
m
ID. 15 A
Qg.typ
32
nC
ID,pulse
30
A
Eoss@400V
2.8
µJ
Type/OrderingCode
IPAW60R380CE
Package
PG - TO220 FullPAK
WideCreepage
Marking
60S380CE
RelatedLinks
see Appendix A
Final Data Sheet
1
2016-03-31

1 Page





IPAW60R380CE pdf, ピン配列
600VCoolMOSªCEPowerTransistor
IPAW60R380CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation (Full PAK)
Storage temperature
Operating junction temperature
Mounting torque
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
ID
ID,pulse
EAS
EAR
IAR
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
IS
IS,pulse
dv/dt
Maximum diode commutation speed
Power dissipation (Non FullPAK)
TO-220
Insulation withstand voltage for
TO-220FP
dif/dt
Ptot
VISO
Min.
-
-
-
-
-
-
-
-20
-30
-
-40
-40
-
-
-
-
-
Values
Typ. Max.
- 15
- 9.5
- 30
- 210
- 0.32
- 1.8
- 50
- 20
- 30
- 31
- 150
- 150
- 50
- 10.6
- 30
- 15
- 500
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=1.8A; VDD=50V; see table 10
mJ ID=1.8A; VDD=50V; see table 10
A-
V/ns VDS=0...480V
V static;
V AC (f>1 Hz)
W TC=25°C
°C -
°C -
Ncm M2.5 screws
A TC=25°C
A TC=25°C
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
- - 112 W -
-
-
2500 V
Vrms,TC=25°C,t=1min
1) Limited by Tj max. Maximum duty cycle D=0.50, TO220 equivalent
2) Pulse width tp limited by Tj,max
3)IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet
3
2016-03-31


3Pages


IPAW60R380CE 電子部品, 半導体
600VCoolMOSªCEPowerTransistor
IPAW60R380CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
VSD
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
290 -
3.3 -
21 -
Unit Note/TestCondition
V VGS=0V,IF=4.8A,Tj=25°C
ns
VR=400V,IF=4.8A,diF/dt=100A/µs;
see table 8
µC
VR=400V,IF=4.8A,diF/dt=100A/µs;
see table 8
A
VR=400V,IF=4.8A,diF/dt=100A/µs;
see table 8
Final Data Sheet
6
2016-03-31

6 Page



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部品番号部品説明メーカ
IPAW60R380CE

MOSFET ( Transistor )

Infineon
Infineon


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