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IPS60R460CE の電気的特性と機能

IPS60R460CEのメーカーはInfineonです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IPS60R460CE
部品説明 MOSFET ( Transistor )
メーカ Infineon
ロゴ Infineon ロゴ 




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IPS60R460CE Datasheet, IPS60R460CE PDF,ピン配置, 機能
IPS60R460CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
460
m
Id. 13.1 A
Qg.typ
28
nC
ID,pulse
26
A
Eoss@400V
2.5
µJ
Type/OrderingCode
IPS60R460CE
Package
PG-TO 251
Marking
60S460CE
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-25

1 Page





IPS60R460CE pdf, ピン配列
600VCoolMOSªCEPowerTransistor
IPS60R460CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation (Non FullPAK)
TO-251
Storage temperature
Operating junction temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
ID
ID,pulse
EAS
EAR
IAR
dv/dt
VGS
VGS
Ptot
Tstg
Tj
IS
IS,pulse
dv/dt
Maximum diode commutation speed dif/dt
Min.
-
-
-
-
-
-
-
-20
-30
Values
Typ. Max.
- 13.1
- 8.3
- 26
- 185
- 0.28
- 1.6
- 50
- 20
- 30
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=1.6A; VDD=50V; see table 11
mJ ID=1.6A; VDD=50V; see table 11
A-
V/ns VDS=0...480V
V static;
V AC (f>1 Hz)
- - 102 W TC=25°C
-40 -
-40 -
--
--
--
--
150 °C -
150 °C -
9.3 A TC=25°C
26 A TC=25°C
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
500
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
1) Limited by Tj max. Maximum duty cycle D=0.50
2) Pulse width tp limited by Tj,max
3)IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet
3
Rev.2.0,2016-02-25


3Pages


IPS60R460CE 電子部品, 半導体
600VCoolMOSªCEPowerTransistor
IPS60R460CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
VSD
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
320 -
3.1 -
21 -
Unit Note/TestCondition
V VGS=0V,IF=4.2A,Tj=25°C
ns
VR=400V,IF=4.2A,diF/dt=100A/µs;
see table 9
µC
VR=400V,IF=4.2A,diF/dt=100A/µs;
see table 9
A
VR=400V,IF=4.2A,diF/dt=100A/µs;
see table 9
Final Data Sheet
6 Rev.2.0,2016-02-25

6 Page



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部品番号部品説明メーカ
IPS60R460CE

MOSFET ( Transistor )

Infineon
Infineon


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