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IPU60R3K4CE の電気的特性と機能

IPU60R3K4CEのメーカーはInfineonです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IPU60R3K4CE
部品説明 MOSFET ( Transistor )
メーカ Infineon
ロゴ Infineon ロゴ 




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IPU60R3K4CE Datasheet, IPU60R3K4CE PDF,ピン配置, 機能
IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorLighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
DPAK
tab
2
1
3
IPAK
tab
12 3
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
3400
m
Id. 2.6 A
Qg.typ
4.6
nC
ID,pulse
3.9
A
Eoss@400V
0.57
µJ
Type/OrderingCode
IPD60R3K4CE
IPU60R3K4CE
IPS60R3K4CE
Package
PG-TO 252
PG-TO 251
PG-TO 251
Marking
60S3K4CE
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-26

1 Page





IPU60R3K4CE pdf, ピン配列
600VCoolMOSªCEPowerTransistor
IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation TO-252
Storage temperature
Operating junction temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
ID
ID,pulse
EAS
EAR
IAR
dv/dt
VGS
VGS
Ptot
Tstg
Tj
IS
IS,pulse
dv/dt
Maximum diode commutation speed dif/dt
Min.
-
-
-
-
-
-
-
-20
-30
-
-40
-40
-
-
-
-
Values
Typ. Max.
- 2.6
- 1.6
- 3.9
-6
- 0.04
- 0.3
- 50
- 20
- 30
- 29
- 150
- 150
- 1.8
-4
- 15
- 500
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=0.3A; VDD=50V; see table 11
mJ ID=0.3A; VDD=50V; see table 11
A-
V/ns VDS=0...480V
V static;
V AC (f>1 Hz)
W TC=25°C
°C -
°C -
A TC=25°C
A TC=25°C
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
2Thermalcharacteristics
Table3ThermalcharacteristicsTO-252/TO-251
Parameter
Symbol
Values
Min. Typ. Max.
Thermal resistance, junction - case RthJC
- - 4.26
Thermal resistance, junction - ambient RthJA
- - 62
Thermal resistance, junction - ambient
for SMD version
RthJA
- 35 45
Soldering temperature, wave & reflow
soldering allowed
Tsold
- - 260
Unit Note/TestCondition
°C/W -
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
°C/W
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
°C reflow MSL1
1) Limited by Tj max. Maximum duty cycle D=0.50
2) Pulse width tp limited by Tj,max
3)IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet
3
Rev.2.0,2016-02-26


3Pages


IPU60R3K4CE 電子部品, 半導体
600VCoolMOSªCEPowerTransistor
IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(NonFullPAK)
30
25
20
15
Diagram2:Safeoperatingarea(NonFullPAK)
101
1 µs
10 µs
100 100 µs
1 ms
DC
10-1
10
10-2
5
0
0
Ptot=f(TC)
10-3
25 50 75 100 125 150
100
TC[°C]
101 102
VDS[V]
ID=f(VDS);TC=25°C;D=0;parameter:tp
103
Diagram3:Safeoperatingarea(NonFullPAK)
101
Diagram4:Max.transientthermalimpedance(NonFullPAK)
101
1 µs 0.5
100
10 µs
0.2
100 µs
1 ms
DC
0.1
100 0.05
0.02
10-1 0.01
single pulse
10-2
10-1
10-3
100
101
VDS[V]
ID=f(VDS);TC=80°C;D=0;parameter:tp
102
Final Data Sheet
10-2
103 10-5
10-4
ZthJC=f(tP);parameter:D=tp/T
10-3
tp[s]
10-2
10-1
6 Rev.2.0,2016-02-26

6 Page



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部品番号部品説明メーカ
IPU60R3K4CE

MOSFET ( Transistor )

Infineon
Infineon


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