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IPS60R1K5CE の電気的特性と機能

IPS60R1K5CEのメーカーはInfineonです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IPS60R1K5CE
部品説明 MOSFET ( Transistor )
メーカ Infineon
ロゴ Infineon ロゴ 




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IPS60R1K5CE Datasheet, IPS60R1K5CE PDF,ピン配置, 機能
IPS60R1K5CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
1500
m
Id. 5
A
Qg.typ
9.4
nC
ID,pulse
8
A
Eoss@400V
1
µJ
Type/OrderingCode
IPS60R1K5CE
Package
PG-TO 251
Marking
60S1K5CE
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-26

1 Page





IPS60R1K5CE pdf, ピン配列
600VCoolMOSªCEPowerTransistor
IPS60R1K5CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
TO-251
Storage temperature
Operating junction temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
ID
ID,pulse
EAS
EAR
IAR
dv/dt
VGS
VGS
Ptot
Tstg
Tj
IS
IS,pulse
dv/dt
Maximum diode commutation speed dif/dt
Min.
-
-
-
-
-
-
-
-20
-30
Values
Typ. Max.
-5
- 3.2
-8
- 26
- 0.09
- 0.6
- 50
- 20
- 30
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=0.6A; VDD=50V; see table 11
mJ ID=0.6A; VDD=50V; see table 11
A-
V/ns VDS=0...480V
V static;
V AC (f>1 Hz)
- - 49 W TC=25°C
-40 -
-40 -
--
--
--
--
150 °C -
150 °C -
3.5 A TC=25°C
8 A TC=25°C
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
500
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
2Thermalcharacteristics
Table3ThermalcharacteristicsTO-251
Parameter
Symbol
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient RthJA
Soldering temperature, wavesoldering
only allowed at leads
Tsold
Min.
-
-
-
Values
Typ. Max.
- 2.57
- 62
- 260
Unit Note/TestCondition
°C/W -
°C/W leaded
°C 1.6mm (0.063 in.) from case for 10s
1) Limited by Tj max. Maximum duty cycle D=0.50
2) Pulse width tp limited by Tj,max
3)IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet
3
Rev.2.0,2016-02-26


3Pages


IPS60R1K5CE 電子部品, 半導体
600VCoolMOSªCEPowerTransistor
IPS60R1K5CE
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(NonFullPAK)
50
45
40
35
30
25
20
15
10
5
0
0
Ptot=f(TC)
25 50 75 100
TC[°C]
125
Diagram2:Safeoperatingarea(NonFullPAK)
101
1 µs
10 µs
100 µs
100 1 ms
DC
10-1
10-2
10-3
150 100
101
VDS[V]
ID=f(VDS);TC=25°C;D=0;parameter:tp
102
103
Diagram3:Safeoperatingarea(NonFullPAK)
101
1 µs
10 µs
100 µs
100 1 ms
DC
10-1
10-2
Diagram4:Max.transientthermalimpedance(NonFullPAK)
101
0.5
100 0.2
0.1
0.05
0.02
0.01
10-1 single pulse
10-3
100
101
VDS[V]
ID=f(VDS);TC=80°C;D=0;parameter:tp
102
Final Data Sheet
10-2
103 10-5
10-4
ZthJC=f(tP);parameter:D=tp/T
10-3
tp[s]
10-2
10-1
6 Rev.2.0,2016-02-26

6 Page



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部品番号部品説明メーカ
IPS60R1K5CE

MOSFET ( Transistor )

Infineon
Infineon


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