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Número de pieza | IPS60R1K0CE | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPS60R1K0CE (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! IPS60R1K0CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
1000
mΩ
Id. 6.8 A
Qg.typ
13
nC
ID,pulse
12
A
Eoss@400V
1.3
µJ
Type/OrderingCode
IPS60R1K0CE
Package
PG-TO 251
Marking
60S1K0CE
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-26
1 page 600VCoolMOSªCEPowerTransistor
IPS60R1K0CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
VSD
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
220 -
1.5 -
12 -
Unit Note/TestCondition
V VGS=0V,IF=1.9A,Tj=25°C
ns
VR=400V,IF=1.9A,diF/dt=100A/µs;
see table 9
µC
VR=400V,IF=1.9A,diF/dt=100A/µs;
see table 9
A
VR=400V,IF=1.9A,diF/dt=100A/µs;
see table 9
Final Data Sheet
5 Rev.2.0,2016-02-26
5 Page 600VCoolMOSªCEPowerTransistor
IPS60R1K0CE
6PackageOutlines
DOCUMENT NO.
Z8B00003329
MILLIMETERS
INCHES
DIM
MIN MAX
MIN MAX
A
2.18
2.40
0.086
0.094
SCALE
0
A1
0.80
1.14
0.031
0.045
b
0.64
0.89
0.025
0.035
b2
0.65
1.15
0.026
0.045
2.0
0 2.0
b4
4.95
5.50
0.195
0.217
c
0.46
0.59
0.018
0.023
4mm
c2
0.46
0.89
0.018
0.035
EUROPEAN PROJECTION
D
5.97
6.22
0.235
0.245
D1
5.04
5.55
0.198
0.219
E
6.35
6.73
0.250
0.265
E1
4.60
5.21
0.181
0.205
e 2.29
0.090
e1 4.57
0.180
N3
3
L
3.00
3.60
0.118
0.142
L1
0.80
1.25
0.031
0.049
L2
0.88
1.28
0.035
0.050
ISSUE DATE
21-10-2015
REVISION
06
Figure1OutlinePG-TO251,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.0,2016-02-26
11 Page |
Páginas | Total 13 Páginas | |
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