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PDF IPA60R1K5CE Data sheet ( Hoja de datos )

Número de pieza IPA60R1K5CE
Descripción MOSFET ( Transistor )
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! IPA60R1K5CE Hoja de datos, Descripción, Manual

IPA60R1K5CE
MOSFET
600VCoolMOS™CEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
1500
m
Id. 5
A
Qg.typ
9.4
nC
ID,pulse
8
A
Eoss@400V
1
µJ
Type/OrderingCode
IPA60R1K5CE
Package
PG-TO 220 FullPAK
Marking
60S1K5CE
TO-220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-26

1 page




IPA60R1K5CE pdf
600VCoolMOS™CEPowerTransistor
IPA60R1K5CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
VSD
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
230 -
1.1 -
9.8 -
Unit Note/TestCondition
V VGS=0V,IF=1.4A,Tj=25°C
ns
VR=400V,IF=1.4A,diF/dt=100A/µs;
see table 9
µC
VR=400V,IF=1.4A,diF/dt=100A/µs;
see table 9
A
VR=400V,IF=1.4A,diF/dt=100A/µs;
see table 9
Final Data Sheet
5 Rev.2.0,2016-02-26

5 Page





IPA60R1K5CE arduino
600VCoolMOS™CEPowerTransistor
IPA60R1K5CE
6PackageOutlines
/,..,/*6*45
,0(+*5
),/
MIN MAX MIN MAX
'
4.50
4.90
0.177
0.193
'#
2.34
2.85
0.092
0.112
'$
2.42
2.86
0.095
0.113
9
0.65
0.90
0.026
0.035
9#
0.95
1.38
0.037
0.054
9$
0.95
1.51
0.037
0.059
9%
0.65
1.38
0.026
0.054
9&
0.65
1.51
0.026
0.059
;
0.40
0.63
0.016
0.025
)
15.67
16.15
0.617
0.636
)#
8.97
9.83
0.353
0.387
*
10.00
10.65
0.394
0.419
= 2.54 (BSC)
0.100 (BSC)
=# 5.08
0.200
03
3
+
28.70
29.75
1.130
1.171
.
12.78
13.75
0.503
0.541
.#
2.83 3.45
0.111
0.136
@3
2.95 3.38
0.116
0.133
3
3.15 3.50
0.124
0.138
Dimensions do not include mold flash, protrusions or gate burrs
)1(7/*06 01"
Z8B00003319
5('.* 0
2.5
0 2.5
5mm
*7412*'0 241-*(6,10
,557* )'6*
05-05-2014
4*8,5,10
04
Figure 1 Outline PG-TO 220 FullPAK, dimensions in mm/inches
Final Data Sheet
11 Rev.2.0,2016-02-26

11 Page







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