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UG10CCT PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 UG10CCT
部品説明 Dual Common Cathode Ultrafast Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 



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UG10CCT Datasheet, UG10CCT PDF,ピン配置, 機能
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
TO-220AB
ITO-220AB
3
2
1
BYQ28E, UG10
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
BYQ28EF, UGF10
PIN 1
PIN 2
PIN 3
FEATURES
• Power pack
Available
• Glass passivated pellet chip junction
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
1
BYQ28EB, UGB10
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
VF
TJ max.
Package
2 x 5.0 A
100 V to 200 V
55 A
25 ns
0.895 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB
Diode variations
Common cathode
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
power supplies, freewheeling diodes, DC/DC converters
and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
UG10BCT UG10CCT UG10DCT
SYMBOL
BYQ28E-100 BYQ28E-150 BYQ28E-200
Maximum repetitive peak reverse voltage
VRRM
100
150
200
Working peak reverse voltage
VRWM
100
150
200
Maximum DC blocking voltage
VDC 100 150 200
total device
Maximum average forward rectified current at TC = 100 °C
per diode
IF(AV)
10
5.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
55
Non-repetitive peak reverse current per diode at tp = 100 μs
Electrostatic discharge capacitor voltage,
human body model: C = 250 pF, R = 1.5 k
IRSM
VC
0.2
8
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
TJ, TSTG
VAC
-40 to +150
1500
UNIT
V
V
V
A
A
A
kV
°C
V
Revision: 23-Feb-16
1 Document Number: 88549
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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