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MRF9085SR3 の電気的特性と機能

MRF9085SR3のメーカーはMotorola Semiconductorsです、この部品の機能は「RF POWER MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 MRF9085SR3
部品説明 RF POWER MOSFETs
メーカ Motorola Semiconductors
ロゴ Motorola Semiconductors ロゴ 




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MRF9085SR3 Datasheet, MRF9085SR3 PDF,ピン配置, 機能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.
Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 20 Watts
Power Gain — 17.9 dB
Efficiency — 28%
Adjacent Channel Power —
750 kHz: –45.0 dBc @ 30 kHz BW
1.98 MHz: –60.0 dBc @ 30 kHz BW
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µNominal.
MRF9085
MRF9085R3
MRF9085S
MRF9085SR3
MRF9085LS
MRF9085LSR3
880 MHz, 90 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
(NI–780)
(MRF9085)
CASE 465A–06, STYLE 1
(NI–780S)
(MRF9085S, MRF9085LS)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
MRF9085
MRF9085S/MRF9085LSR3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+15, –0.5
250
1.43
–65 to +200
200
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
Max
0.7
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRF9085 MRF9085R3 MRF9085S MRF9085SR3 MRF9085LS MRF9085LSR3
5.2–181

1 Page





MRF9085SR3 pdf, ピン配列
ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
FUNCTIONAL TESTS (In Motorola Test Fixture)
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Gps 17 17.9 — dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η 36 40 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD — –31 –28 dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL — –21 –9 dB
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
Gps — 17.9 — dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
η
— 40.0 —
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IMD — –31 — dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IRL — –16 — dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, CW, IDQ = 700 mA,
f1 = 880.0 MHz)
P1dB — 105 —
W
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA,
f1 = 880.0 MHz)
Gps — 17.5 — dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA,
f1 = 880.0 MHz)
η — 51 — %
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA,
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRF9085 MRF9085R3 MRF9085S MRF9085SR3 MRF9085LS MRF9085LSR3
5.2–183


3Pages


MRF9085SR3 電子部品, 半導体
f = 865 MHz
Zin
Zo = 2
895 MHz
895 MHz
ZOL*
f = 865 MHz
VDD = 26 V, IDQ = 700 mA, Pout = 90 W PEP
f
MHz
Zin
ZOL*
865
1.35 + j1.92
1.26 + j0.15
880
1.33 + j1.66
1.26 + j0.10
895
1.28 + j1.30
1.21 + j0.20
Zin = Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
Note: ZOL* was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation distortion.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z in Z OL*
Figure 8. Series Equivalent Input and Output Impedance
MRF9085 MRF9085R3 MRF9085S MRF9085SR3 MRF9085LS MRF9085LSR3
5.2–186
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA

6 Page



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部品番号部品説明メーカ
MRF9085SR3

RF POWER MOSFETs

Motorola Semiconductors
Motorola Semiconductors


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