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PDF MRF9085R3 Data sheet ( Hoja de datos )
| Número de pieza | MRF9085R3 | |
| Descripción | RF POWER MOSFETs | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 20 Watts
Power Gain — 17.9 dB
Efficiency — 28%
Adjacent Channel Power —
750 kHz: –45.0 dBc @ 30 kHz BW
1.98 MHz: –60.0 dBc @ 30 kHz BW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MRF9085
MRF9085R3
MRF9085S
MRF9085SR3
MRF9085LS
MRF9085LSR3
880 MHz, 90 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
(NI–780)
(MRF9085)
CASE 465A–06, STYLE 1
(NI–780S)
(MRF9085S, MRF9085LS)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
MRF9085
MRF9085S/MRF9085LSR3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+15, –0.5
250
1.43
–65 to +200
200
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
Max
0.7
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRF9085 MRF9085R3 MRF9085S MRF9085SR3 MRF9085LS MRF9085LSR3
5.2–181
1 page  
TYPICAL CHARACTERISTICS
19 50
18 Gps
17 h
16
15
14
IMD
13
VDD = 26 Vdc
Pout = 90 W (PEP)
IDQ = 700 mA
Two-Tone, 100 kHz Tone Spacing
45
40
35
-28
-30
-32
12
VSWR
-34
11 -36
860 865 870 875 880 885 890 895 900
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
2.00
1.75
1.50
1.25
1.00
19
Gps
17
60
40
15
h
13
VDD = 26 Vdc
11
IDQ = 700 mA
f1 = 880.0 MHz
f2 = 880.1 MHz
9
IMD
20
0
-20
-40
7
1
10 100
Pout, OUTPUT POWER (WATTS) PEP
-60
Figure 4. Power Gain, Efficiency, IMD versus
Output Power
-10
VDD = 26 Vdc
-20
IDQ = 700 mA
f1 = 800.0 MHz
f2 = 800.1 MHz
-30
3rd Order
5th Order
-40
7th Order
-50
-60
-70
1
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion Products
versus Output Power
18
Gps
17
60
50
16 40
15
14
13 h
VDD = 26 Vdc
IDQ = 700 mA
f = 880 MHz
Single Tone
30
20
10
12
1
10 100
Pout, OUTPUT POWER (WATTS) CW AVG.
0
Figure 6. Power Gain, Efficiency versus Output
Power
19
Gps
17
h
15
13
VDD = 26 Vdc
IDQ = 700 mA
f = 880 MHz
40
20
0
-20
11
750 kHz
9
1.98 MHz
7
1
10
Pout, OUTPUT POWER (WATTS) AVG.
-40
-60
-80
Figure 7. Power Gain, Efficiency, ACPR versus
Output Power
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRF9085 MRF9085R3 MRF9085S MRF9085SR3 MRF9085LS MRF9085LSR3
5.2–185
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MRF9085R3.PDF ] | |
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