|
|
Número de pieza | BCX38B | |
Descripción | Si-Epitaxial Planar Darlington-Transistors | |
Fabricantes | Diotec Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCX38B (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! BCX38B
BCX38B
NPN
Si-Epitaxial Planar Darlington-Transistors
Si-Epitaxial Planar Darlington-Transistoren
Version 2006-07-24
Power dissipation
Verlustleistung
Plastic case
E B C Kunststoffgehäuse
Weight approx. – Gewicht ca.
2 x 2.54
Dimensions - Maße [mm]
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
NPN
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
VCEO
VCBO
VEBO
Ptot
IC
ICM
Tj
TS
Grenzwerte (TA = 25°C)
BCX38B
60 V
80 V
10 V
625 mW 1)
800 mA
2A
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 100 mA, VCE = 5 V
IC = 500 mA, VCE = 5 V
hFE
hFE
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 800 mA, IB = 8 mA
VCEsat
Base-Emitter voltage – Basis-Emitter-Spannung 2)
IC = 800 mA, VCE = 5 V
VBE
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 60 V, (E open)
ICBO
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 8 V, (C open)
IEB0
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
2000
4000
–
–
–
–
– – 1.25 V
– – 1.8 V
– – 100 nA
– – 100 nA
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet BCX38B.PDF ] |
Número de pieza | Descripción | Fabricantes |
BCX38 | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS | Zetex Semiconductors |
BCX38 | NPN Transistor | JCST |
BCX38A | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS | Zetex Semiconductors |
BCX38A | NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS | CDIL |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |