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6CWQ10FNのメーカーはSANGDEST MICROELECTRONICSです、この部品の機能は「Schottky Rectifier ( Diode )」です。 |
部品番号 | 6CWQ10FN |
| |
部品説明 | Schottky Rectifier ( Diode ) | ||
メーカ | SANGDEST MICROELECTRONICS | ||
ロゴ | |||
このページの下部にプレビューと6CWQ10FNダウンロード(pdfファイル)リンクがあります。 Total 5 pages
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0607, Rev. -
Applications:
6CWQ10FN SCHOTTKY RECTIFIER
• Disk drives
• Switching power supply
• Converters
• Free-Wheeling diodes
• Reverse battery protection
• Battery charging
Features:
• 150 ℃ TJ operation
• Center tap configuration
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• This is a Pb − Free Device
• All SMC parts are traceable to the wafer lot
• Additional testing can be offered upon request
Mechanical Dimensions: In mm
6CWQ10FN
Green Products
DPAK
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
1 Page SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0607, Rev. -
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg) *
Max. Reverse Current (per
leg) *
Max. Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
VF2
IR1
IR2
CT
LS
dv/dt
Condition
@ 3A, Pulse, TJ = 25 °C
@ 6A, Pulse, TJ = 25 °C
@ 3A, Pulse, TJ = 125 °C
@ 6A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm
from package body
-
6CWQ10FN
Green Products
Max.
0.81
0.96
0.63
0.74
1.00
4.9
92
5.0
10,000
Units
V
V
mA
mA
pF
nH
V/μs
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Approximate Weight
Case Style
Symbol
TJ
Tstg
Condition
-
-
RθJC
DC operation
wt -
DPAK
Specification
-55 to +150
-55 to +150
4.7(peg leg)
2.35(peg device)
0.39
Units
°C
°C
°C/W
g
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ 6CWQ10FN データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
6CWQ10FN | Schottky Rectifier ( Diode ) | International Rectifier |
6CWQ10FN | Schottky Rectifier ( Diode ) | SANGDEST MICROELECTRONICS |
6CWQ10FNPbF | Schottky Rectifier ( Diode ) | Vishay |