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11DQ09 の電気的特性と機能

11DQ09のメーカーはVishayです、この部品の機能は「Schottky Rectifier ( Diode )」です。


製品の詳細 ( Datasheet PDF )

部品番号 11DQ09
部品説明 Schottky Rectifier ( Diode )
メーカ Vishay
ロゴ Vishay ロゴ 




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11DQ09 Datasheet, 11DQ09 PDF,ピン配置, 機能
11DQ09, 11DQ10
Vishay High Power Products
Schottky Rectifier, 1.1 A
DO-204AL
Cathode
Anode
PRODUCT SUMMARY
IF(AV)
VR
1.1 A
90/100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 µs sine
VF 1 Apk, TJ = 25 °C
TJ Range
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
DESCRIPTION
The 11DQ.. axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
VALUES
1.1
90/100
85
0.85
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
11DQ09
90
11DQ10
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 6
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 75 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 0.5 A, L = 8 mH
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
1.1
85
14
1.0
0.5
UNITS
A
mJ
A
Document Number: 93207
Revision: 06-Nov-08
For technical questions, contact: [email protected]
www.vishay.com
1

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11DQ09 pdf, ピン配列
11DQ09, 11DQ10
Schottky Rectifier, 1.1 A Vishay High Power Products
10 100
TJ = 25˚C
TJ = 150˚C
TJ = 125˚C
1
TJ = 25˚C
10
0 20 40 60 80 100
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
150
120
DC
90
0.1
0
0.4 0.8 1.2 1.6
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
60
Square wave (D = 0.50)
80% Rated VR applied
30
see note (1)
0
0 0.3 0.6 0.9 1.2 1.5
Average Forward Current - IF(AV)(A)
Fig. 4 - Maximum Ambient Temperature vs.
Average Forward Current
10
1 TJ = 150˚C
0.1
0.01
125˚C
0.001
0.0001
25˚C
0.8
D = 0.20
D = 0.25
D = 0.33
D = 0.50
0.6 D = 0.75
RMS Limit
0.4
0.2
DC
0
0 20 40 60 80 100
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
0
0 0.3 0.6 0.9 1.2 1.5
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Document Number: 93207
Revision: 06-Nov-08
For technical questions, contact: [email protected]
www.vishay.com
3


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