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HGH20N120A PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HGH20N120A
部品説明 N-Channel Enhancement Mode Field Effect Transistor
メーカ HUASHAN ELECTRONIC
ロゴ HUASHAN ELECTRONIC ロゴ 



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HGH20N120A Datasheet, HGH20N120A PDF,ピン配置, 機能
汕头华汕电子器件有限公司
N-Channel Enhancement Insulated Gate Bipolar Transistor
HGH20N120A
Applications
• Induction heating and Microwave oven
• Soft switching applications
Features
TO-3P
• Low saturation voltage, Vce(on)(typ)=2.3V@Vge=15V
• High input impedance
• Field stop trench technology offer superior
conduction and switching performances,
• High speed switching
Absolute Maximum Ratings
1―Gate,G
2―Collector,C
3―Emitter,E
Symbol
VCES
VGES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Ratings
1200
±30
Units
V
V
Collector Current(TC = 25℃)
IC
Collector Current(TC = 100℃)
40
20
A
A
ICM (1) Pulsed Collector Current
80 A
IF
Diode continuous Forward current
(TC = 100℃)
15
A
Maximum Power Dissipation(TC =
PD
25℃)
Maximum Power Dissipation(TC =
100℃)
200
80
W
W
TJ
Operating Junction
Temperature
-55~+150 ℃
Tstg Storage Temperature Range -55~+150 ℃
Maximum Lead Temp. for soldering
TL Purposes, 1/8” from case for 5
seconds
300
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
Typ.
RθJC(IGBT) Thermal Resistance, Junction to Case
RθJC(Diode) Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max. Units
0.44 ℃/W
2.24 ℃/W
40 ℃/W

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HGH20N120A

N-Channel Enhancement Mode Field Effect Transistor

HUASHAN ELECTRONIC
HUASHAN ELECTRONIC

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