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PDF HFP80N75 Data sheet ( Hoja de datos )
| Número de pieza | HFP80N75 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | HUASHAN ELECTRONIC | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co.,Ltd.
HFP80N75
N-Channel Enhancement Mode Field Effect Transistor
█ Applications
• Servo motor control.
• Power MOSFET gate drivers.
• DC/DC converters
• Other switching applications.
█ Features
• 80A, 75V(See Note), RDS(on) <11mVΩ@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Minimize input capacitance and gate charge
• Equivalent Type:ME80N75
TO-220
1- G 2-D 3-S
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------75V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±20V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 80A
IDM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 300A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 100W
Derate Above 25℃ ------------------------------------------------------------------------- 2.0W/℃
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 400mJ
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 2.0
Max 62.5
Unit
℃/W
℃/W
1 page  
Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFP80N75
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HFP80N75.PDF ] | |
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