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HFP17N10のメーカーはHUASHAN ELECTRONICです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。 |
部品番号 | HFP17N10 |
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部品説明 | N-Channel Enhancement Mode Field Effect Transistor | ||
メーカ | HUASHAN ELECTRONIC | ||
ロゴ | |||
このページの下部にプレビューとHFP17N10ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Shantou Huashan Electronic Devices Co.,Ltd.
HFP17N10
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC motor control.
█ Features
• 17A, 100V, RDS(on) <70mΩ@VGS = 10 V
• High density cell design for ultra low Rdson
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
█ Maximum Ratings(Ta=25℃ unless otherwise specified)
TO-220
1- G 2- D 3- S
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------100V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±20V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 17A
IDM —— Pulsed Drain Current (Note 1) ----------------------------------------------------------------- 60A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 55W
Derate Above 25℃ ------------------------------------------------------------------------- 0.43W/℃
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 250mJ
IAR—— Avalanche Current (Note 1) ----------------------------------------------------------------------- 17A
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 2.27
Max 62.5
Unit
℃/W
℃/W
1 Page Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFP17N10
3Pages Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFP17N10
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ HFP17N10 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
HFP17N10 | N-Channel Enhancement Mode Field Effect Transistor | HUASHAN ELECTRONIC |