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HFP17N10 の電気的特性と機能

HFP17N10のメーカーはHUASHAN ELECTRONICです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 HFP17N10
部品説明 N-Channel Enhancement Mode Field Effect Transistor
メーカ HUASHAN ELECTRONIC
ロゴ HUASHAN ELECTRONIC ロゴ 




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HFP17N10 Datasheet, HFP17N10 PDF,ピン配置, 機能
Shantou Huashan Electronic Devices Co.,Ltd.
HFP17N10
N-Channel Enhancement Mode Field Effect Transistor
General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC motor control.
Features
• 17A, 100V, RDS(on) <70m@VGS = 10 V
• High density cell design for ultra low Rdson
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Maximum RatingsTa=25unless otherwise specified)
TO-220
1- G 2- D 3- S
Tstg——Storage Temperature ------------------------------------------------------ -55~150
Tj ——Operating Junction Temperature -------------------------------------------------- 150
VDSS —— Drain-Source Voltage ----------------------------------------------------------100V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±20V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 17A
IDM —— Pulsed Drain Current (Note 1) ----------------------------------------------------------------- 60A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 55W
Derate Above 25------------------------------------------------------------------------- 0.43W/
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 250mJ
IAR—— Avalanche Current (Note 1) ----------------------------------------------------------------------- 17A
Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 2.27
Max 62.5
Unit
/W
/W

1 Page





HFP17N10 pdf, ピン配列
Shantou Huashan Electronic Devices Co.,Ltd.
Typical Characteristics
HFP17N10


3Pages


HFP17N10 電子部品, 半導体
Shantou Huashan Electronic Devices Co.,Ltd.
Typical Characteristics
HFP17N10

6 Page



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部品番号部品説明メーカ
HFP17N10

N-Channel Enhancement Mode Field Effect Transistor

HUASHAN ELECTRONIC
HUASHAN ELECTRONIC


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