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HFP13N50 の電気的特性と機能

HFP13N50のメーカーはHUASHAN ELECTRONICです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 HFP13N50
部品説明 N-Channel Enhancement Mode Field Effect Transistor
メーカ HUASHAN ELECTRONIC
ロゴ HUASHAN ELECTRONIC ロゴ 




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HFP13N50 Datasheet, HFP13N50 PDF,ピン配置, 機能
Shantou Huashan Electronic Devices Co.,Ltd.
HFP13N50
N-Channel Enhancement Mode Field Effect Transistor
General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
Features
13A, 500V(See Note), RDS(on) <0.48@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:FQP13N50C
Maximum RatingsTa=25unless otherwise specified)
TO-220
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150
Tj ——Operating Junction Temperature -------------------------------------------------- 150
VDSS —— Drain-Source Voltage ----------------------------------------------------------500V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 13A
IDM —— Pulsed Drain Current (Note 1) ----------------------------------------------------------------- 52A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 195W
Derate Above 25------------------------------------------------------------------------- 1.56W/
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 860mJ
IAR—— Avalanche Current (Note 1) ----------------------------------------------------------------------- 13A
EAR —— Repetitive Avalanche Energy (Note 1) ----------------------------------------------------- 19.5mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------4.5V/ns
Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 0.64
Max 62.5
Unit
/W
/W

1 Page





HFP13N50 pdf, ピン配列
Shantou Huashan Electronic Devices Co.,Ltd.
Typical Characteristics
HFP13N50


3Pages


HFP13N50 電子部品, 半導体
Shantou Huashan Electronic Devices Co.,Ltd.
Typical Characteristics
HFP13N50

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
HFP13N50

N-Channel Enhancement Mode Field Effect Transistor

HUASHAN ELECTRONIC
HUASHAN ELECTRONIC
HFP13N50S

N-Channel MOSFET

SemiHow
SemiHow
HFP13N50U

N-Channel MOSFET

SemiHow
SemiHow


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