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HFP13N50のメーカーはHUASHAN ELECTRONICです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。 |
部品番号 | HFP13N50 |
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部品説明 | N-Channel Enhancement Mode Field Effect Transistor | ||
メーカ | HUASHAN ELECTRONIC | ||
ロゴ | |||
このページの下部にプレビューとHFP13N50ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Shantou Huashan Electronic Devices Co.,Ltd.
HFP13N50
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
█ Features
• 13A, 500V(See Note), RDS(on) <0.48Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:FQP13N50C
█ Maximum Ratings(Ta=25℃ unless otherwise specified)
TO-220
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------500V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 13A
IDM —— Pulsed Drain Current (Note 1) ----------------------------------------------------------------- 52A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 195W
Derate Above 25℃ ------------------------------------------------------------------------- 1.56W/℃
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 860mJ
IAR—— Avalanche Current (Note 1) ----------------------------------------------------------------------- 13A
EAR —— Repetitive Avalanche Energy (Note 1) ----------------------------------------------------- 19.5mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------4.5V/ns
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 0.64
Max 62.5
Unit
℃/W
℃/W
1 Page Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFP13N50
3Pages Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFP13N50
6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ HFP13N50 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
HFP13N50 | N-Channel Enhancement Mode Field Effect Transistor | HUASHAN ELECTRONIC |
HFP13N50S | N-Channel MOSFET | SemiHow |
HFP13N50U | N-Channel MOSFET | SemiHow |