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Número de pieza | HFP13N10 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | HUASHAN ELECTRONIC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HFP13N10 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Shantou Huashan Electronic Devices Co.,Ltd.
HFP13N10
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC motor control.
█ Features
• 13A, 100V, RDS(on) <0.10Ω@VGS = 10 V
• High density cell design for ultra low Rdson
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
█ Maximum Ratings(Ta=25℃ unless otherwise specified)
TO-220
1- G 2- D 3- S
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------100V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±20V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 13A
IDM —— Pulsed Drain Current (Note 1) ----------------------------------------------------------------- 52A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 65W
Derate Above 25℃ ------------------------------------------------------------------------- 0.43W/℃
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 250mJ
IAR—— Avalanche Current (Note 1) ----------------------------------------------------------------------- 13A
EAR —— Repetitive Avalanche Energy (Note 1) ------------------------------------------------------ 6.5mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) -------------------------------------------------------6V/ns
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 2.3
Max 62.5
Unit
℃/W
℃/W
1 page Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFP13N10
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet HFP13N10.PDF ] |
Número de pieza | Descripción | Fabricantes |
HFP13N10 | N-Channel Enhancement Mode Field Effect Transistor | HUASHAN ELECTRONIC |
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