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CS2N60A4T の電気的特性と機能

CS2N60A4TのメーカーはHuajing Microelectronicsです、この部品の機能は「Silicon N-Channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 CS2N60A4T
部品説明 Silicon N-Channel Power MOSFET
メーカ Huajing Microelectronics
ロゴ Huajing Microelectronics ロゴ 




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CS2N60A4T Datasheet, CS2N60A4T PDF,ピン配置, 機能
Silicon N-Channel Power MOSFET
CS2N60 A4T
R
General Description
CS2N60 A4T, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard..
Features
l Fast Switching
l Low ON Resistance(Rdson4.5)
l Low Gate Charge (Typical Data:8nC)
l Low Reverse transfer capacitances(Typical:1.2pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD (TC=25)
RDS(ON)Typ
600
2
35
3.5
Rating
600
2.0
1.45
8.0
±30
80
6.4
1.1
5
35
0.28
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
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CS2N60A4T pdf, ピン配列
CS2N60 A4T
R
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width tp300µs,δ≤2%
Test Conditions
IS=2.0A,VGS=0V
IS=2.0A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Min.
--
--
--
--
--
Rating
Typ. Max.
-- 2
-- 8
-- 1.5
189 --
598 --
Units
A
A
V
ns
nC
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ. Units
3.57 /W
62 /W
a1Repetitive rating; pulse width limited by maximum junction temperature
a2L=10.0mH, ID=4A, Start TJ=25
a3ISD =2A,di/dt 100A/us,VDDBVDS, Start TJ=25
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 3 of 1 0 20 15V0 1


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CS2N60A4T 電子部品, 半導体
CS2N60 A4T
R
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75 VGS=0V
0.7 ID=250μA
0.65
-75
Figure
-50 -25 0 25 50 75 100 125 150 175
Tj, Junction temperature , C
11 Typical Theshold Voltage vs Junction Temperature
10000
1000
100
Ciss
Coss
1.1
1.05
1
0.95 VGS=0V
ID=250μA
0.9
-55
Figure
-30 -5 20 45 70 95 120 145 170
Tj, Junction temperature , C
12 Typical Breakdown Voltage vs Junction Temperature
12
VDS=120V
10 VDS=300V
8 VDS=480V
6
10
VGS=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
Crss
1
0.1 1 10 100
Vds , Drain - Source Voltage , Volts
Figure 13 Typical Capacitance vs Drain to Source Voltage
8
7
6
5
4
+150
3
+25
2 -55
1
0
0 0.2 0.4 0.6 0.8 1 1.2
Vsd , Source - Drain Voltage , Volts
Figure 15 Typical Body Diode Transfer Characteristics
4
2
ID=2A
0
0 2 46
8 10
Qg , Total Gate Charge , nC
Figure 14 Typical Gate Charge vs Gate to Source Voltage
100
10
STARTING Tj = 25
STARTING Tj = 150
1
If R=0: tAV=(L* IAS) / (1.38VDSS-VDD)
If R0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0.1
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00
tav,Time in Avalanche,Seconds
Figure 16 Unclamped Inductive Switching Capability
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 6 of 1 0 20 15V0 1

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部品番号部品説明メーカ
CS2N60A4H

Silicon N-Channel Power MOSFET

Huajing Microelectronics
Huajing Microelectronics
CS2N60A4T

Silicon N-Channel Power MOSFET

Huajing Microelectronics
Huajing Microelectronics


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