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CS10N65FA9HD の電気的特性と機能

CS10N65FA9HDのメーカーはHuajing Microelectronicsです、この部品の機能は「Silicon N-Channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 CS10N65FA9HD
部品説明 Silicon N-Channel Power MOSFET
メーカ Huajing Microelectronics
ロゴ Huajing Microelectronics ロゴ 




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CS10N65FA9HD Datasheet, CS10N65FA9HD PDF,ピン配置, 機能
Silicon N-Channel Power MOSFET
CS10N65F A9HD
R
General Description
CS10N65F A9HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
ID
PD (TC=25)
RDS(ON)Typ
650
10
50
0.65
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:39nC)
l Low Reverse transfer capacitances(Typical:16pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
650
10
8.2
40
±30
700
70
3.7
5.0
50
0.4
4000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01

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CS10N65FA9HD pdf, ピン配列
CS10N65F A9HD
R
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width tp300µs,δ≤2%
Test Conditions
IS=10.0A,VGS=0V
IS=10.0A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Rating
Min. Typ. Max.
-- -- 10
-- -- 40
-- -- 1.5
-- 275 --
-- 1766 --
Units
A
A
V
ns
nC
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
2.5
100
Units
/W
/W
Gate-source Zener diode
Symbol
Parameter
Rating
Test Conditions
Min. Typ. Max.
VGSO
Gate-source breakdown voltage
IGS= ±1mA(Open Drain) 30
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the
usage of external components.
Units
V
a1Repetitive rating; pulse width limited by maximum junction temperature
a2L=10.0mH, ID=12.6A, Start TJ=25
a3ISD =10A,di/dt 100A/us,VDDBVDS, Start TJ=25
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10 2015V01


3Pages


CS10N65FA9HD 電子部品, 半導体
CS10N65F A9HD
R
1.15
1.2
1.1
1.1
1.05
1
1
0.9
0.8 VGS=0V
ID=250μA
0.7
-100 -50
0
50 100 150 200
Tj, Junction temperature , C
Figure 11 Typical Theshold Voltage vs Junction Temperature
2500
2000
VGS=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
1500
1000
Coss
Ciss
0.95
VGS=0V
ID=250μA
0.9
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction temperature , C
Figure 12 Typical Breakdown Voltage vs Junction Temperature
15
12 VDS=480V
ID=10A
9
6
500
Crss
0
0
10 20 30 40 50
Vds , Drain - Source Voltage , Volts
60
Figure 13 Typical Capacitance vs Drain to Source Voltage
6
5
4
3
0
0
Figure
100
15 30 45 60 75
Qg , Total Gate Charge , nC
14 Typical Gate Charge vs Gate to Source Voltage
STARTING Tj = 25
STARTING Tj = 150
10
3 +150
+25
2 -55
1
1
If R=0: tAV=(L* IAS) / (1.38VDSS-VDD)
If R0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
Vsd , Source - Drain Voltage , Volts
Figure 15 Typical Body Diode Transfer Characteristics
0.1
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01
tav , Time in Avalanche , Seconds
Figure 16 Unclamped Inductive Switching Capability
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 6 of 10 2015V01

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部品番号部品説明メーカ
CS10N65FA9HD

Silicon N-Channel Power MOSFET

Huajing Microelectronics
Huajing Microelectronics


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