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PDF CS1N80A4H Data sheet ( Hoja de datos )

Número de pieza CS1N80A4H
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing Microelectronics 
Logotipo Huajing Microelectronics Logotipo



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No Preview Available ! CS1N80A4H Hoja de datos, Descripción, Manual

Silicon N-Channel Power MOSFET
CS1N80 A4H
R
General Description
CS1N80 A4H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD (TC=25)
RDS(ON)Typ
performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features
l Fast Switching
800
1
30
12
l Low ON Resistance(Rdson15)
l Low Gate Charge (Typical Data:6.7nC)
l Low Reverse transfer capacitances(Typical:2.6pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
800
1.0
0.65
4.0
±30
60
6
1.1
5.0
30
0.24
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1

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CS1N80A4H pdf
CS1N80 A4H
R
10
FOR TEMPERATURES
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
1
VGS=10V
0.1
1.00E-05
1.5
1.2
0.9
0.6
0.3
1.00E-04
1.00E-03
1.00E-02
1.00E-01
t Pulse W idth , Seconds
Figure 6 Maximun Peak Current Capability
30
25
VDS=25V
20
15
10
5
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
ID= 1A
ID= 0.5A
ID= 0.25A
0
02468
Vgs,Gate to Source Voltage,Volts
Figure 7 Typical Transfer Characteristics
14
0
10 4 6 8 10 12 14
Vgs , Gate to Source VoltageVolts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
13
VGS=10V
12
2
VGS=10V
ID=0.5A
1.5
11 1
10 0.5
9
0 0.3 0.6 0.9 1.2 1.5
Id,Drain Current,Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
0
-100 -50 0 50 100 150 200
Tj,Junction Temperature,C
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1

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