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CS10N80A8DのメーカーはHuajing Microelectronicsです、この部品の機能は「Silicon N-Channel Power MOSFET」です。 |
部品番号 | CS10N80A8D |
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部品説明 | Silicon N-Channel Power MOSFET | ||
メーカ | Huajing Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとCS10N80A8Dダウンロード(pdfファイル)リンクがあります。 Total 10 pages
Silicon N-Channel Power MOSFET
CS10N80 A8D
○R
General Description:
CS10N80 A8D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
800
10
160
0.72
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features:
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 65nC)
l Low Reverse transfer capacitances(Typical: 25pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of PC POWER.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS
EAR a1
IAR a1
dv/dt a2
PD
VESD(G-S)
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
800
10
6.5
40
±30
997
40
2.8
5.0
160
1.28
6000
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
1 Page CS10N80 A8D
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Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width tp≤300µs,δ≤2%
Test Conditions
IS=10A,VGS=0V
IS=10A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Min.
--
--
--
--
--
Rating
Typ. Max.
-- 10
-- 40
-- 1.5
200 --
2.2 --
Units
A
A
V
ns
µC
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ. Units
0.78 ℃/W
62.5 ℃/W
Gate-source Zener diode
Symbol
Parameter
Rating
Test Conditions
Min. Typ. Max.
VGSO
Gate-source breakdown voltage
IGS= ±1mA(Open Drain) 30
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Units
V
a1:Repetitive rating; pulse width limited by maximum junction temperature
a2:ISD =9A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 3 of 1 0 20 15V0 1
3Pages CS10N80 A8D
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WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 6 of 1 0 20 15V0 1
6 Page | |||
ページ | 合計 : 10 ページ | ||
|
PDF ダウンロード | [ CS10N80A8D データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
CS10N80A8D | Silicon N-Channel Power MOSFET | Huajing Microelectronics |