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CS10N80A8D の電気的特性と機能

CS10N80A8DのメーカーはHuajing Microelectronicsです、この部品の機能は「Silicon N-Channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 CS10N80A8D
部品説明 Silicon N-Channel Power MOSFET
メーカ Huajing Microelectronics
ロゴ Huajing Microelectronics ロゴ 




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CS10N80A8D Datasheet, CS10N80A8D PDF,ピン配置, 機能
Silicon N-Channel Power MOSFET
CS10N80 A8D
R
General Description
CS10N80 A8D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD(TC=25)
RDS(ON)Typ
800
10
160
0.72
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 65nC)
l Low Reverse transfer capacitances(Typical: 25pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of PC POWER.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS
EAR a1
IAR a1
dv/dt a2
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
800
10
6.5
40
±30
997
40
2.8
5.0
160
1.28
6000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
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CS10N80A8D pdf, ピン配列
CS10N80 A8D
R
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width tp300µs,δ≤2%
Test Conditions
IS=10A,VGS=0V
IS=10A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Min.
--
--
--
--
--
Rating
Typ. Max.
-- 10
-- 40
-- 1.5
200 --
2.2 --
Units
A
A
V
ns
µC
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ. Units
0.78 /W
62.5 /W
Gate-source Zener diode
Symbol
Parameter
Rating
Test Conditions
Min. Typ. Max.
VGSO
Gate-source breakdown voltage
IGS= ±1mA(Open Drain) 30
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the
usage of external components.
Units
V
a1Repetitive rating; pulse width limited by maximum junction temperature
a2ISD =9A,di/dt 100A/us,VDDBVDS, Start TJ=25
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 3 of 1 0 20 15V0 1


3Pages


CS10N80A8D 電子部品, 半導体
CS10N80 A8D
R
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 6 of 1 0 20 15V0 1

6 Page



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部品番号部品説明メーカ
CS10N80A8D

Silicon N-Channel Power MOSFET

Huajing Microelectronics
Huajing Microelectronics


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