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CS10N60FA9R の電気的特性と機能

CS10N60FA9RのメーカーはHuajing Microelectronicsです、この部品の機能は「Silicon N-Channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 CS10N60FA9R
部品説明 Silicon N-Channel Power MOSFET
メーカ Huajing Microelectronics
ロゴ Huajing Microelectronics ロゴ 




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CS10N60FA9R Datasheet, CS10N60FA9R PDF,ピン配置, 機能
Silicon N-Channel Power MOSFET
CS10N60F A9R
R
General Description
CS10N60F A9R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson0.9)
l Low Gate Charge (Typical Data:32nC)
l Low Reverse transfer capacitances(Typical:7.5pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
600
10
40
0.68
Rating
600
10
6.3
40
±30
580
5.0
40
0.32
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
V/ns
W
W/
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CS10N60FA9R pdf, ピン配列
CS10N60F A9R
R
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM
Reverse Recovery Current
Pulse width tp300µs,δ≤2%
Test Conditions
IS=10A,VGS=0V
IS=10A,Tj = 25
dIF/dt=100A/us,
VGS=0V
Min.
--
--
--
--
--
--
Rating
Typ. Max.
-- 10
-- 40
-- 1.5
499 --
2940 --
11.8 --
Units
A
A
V
ns
nC
A
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ. Units
3.13 /W
62.5 /W
a1Repetitive rating; pulse width limited by maximum junction temperature
a2L=10mH, ID=10.8A, Start TJ=25
a3ISD =10A,di/dt 100A/us,VDDBVDS, Start TJ=25
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 3 of 1 0 20 15V0 1


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CS10N60FA9R 電子部品, 半導体
CS10N60F A9R
R
1.15
1.1
1.05
1
0.95
0.9 VGS=0V
0.85 ID=250μA
0.8
0.75
0.7
0.65
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction temperature , C
Figure 10 Typical Theshold Voltage vs Junction Temperature
1.15
1.05
0.95
VGS=0V
ID=250μA
0.85
0.75
-55 -30
-5 20 45 70 95 120 145 170
Tj, Junction temperature , C
Figure 11 Typical Breakdown Voltage vs Junction Temperature
VGS=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
Ciss
Coss
Crss
Figure 12 Typical Capacitance vs Drain to Source Voltage
12
VDS=480V
10
ID=10A
8
6
4
2
0
0 8 16 24 32 40
Qg , Total Gate Charge , nC
Figure 13 Typical Gate Charge vs Gate to Source Voltage
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 6 of 1 0 20 15V0 1

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部品番号部品説明メーカ
CS10N60FA9HD

Silicon N-Channel Power MOSFET

Huajing Microelectronics
Huajing Microelectronics
CS10N60FA9R

Silicon N-Channel Power MOSFET

Huajing Microelectronics
Huajing Microelectronics


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