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PDF CS100N03FB9 Data sheet ( Hoja de datos )
| Número de pieza | CS100N03FB9 | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
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Silicon N-Channel Power MOSFET
CS100N03F B9
○R
General Description：
CS100N03F B9, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
30
100
40
4.0
switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit
for system miniaturization and higher efficiency. The
package form is TO-220F, which accords with the RoHS
standard.
Features：
l Trench FET Power MOSFET
l Low ON Resistance(Rdson≤5.3mΩ)
l Low Gate Charge (Typical Data:68nC)
l Low Reverse transfer capacitances(Typical:300pF)
l 100% Single Pulse avalanche energy Test
Applications：
UPS,DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
I
D
a1
M
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
30
100
75
400
±20
200
31
2.5
5
40
0.27
TJ，Tstg
TL
Operating Junction and Storage Temperature
Range
Maximum Temperature for Soldering
175，–55 to 175
300
V
A
W
mΩ
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01
1 page  
CS100N03F B9
○R
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10 2015V01
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS100N03FB9.PDF ] | |
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