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BH25FB1WG の電気的特性と機能

BH25FB1WGのメーカーはROHM Semiconductorです、この部品の機能は「Standard CMOS LDO Regulators」です。


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部品番号 BH25FB1WG
部品説明 Standard CMOS LDO Regulators
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




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BH25FB1WG Datasheet, BH25FB1WG PDF,ピン配置, 機能
CMOS LDO Regulator Series for Portable Equipments
Standard CMOS LDO Regulators
BH ŜŜ FB1WG series, BHŜŜ FB1WHFV series,
BH ŜŜ LB1WG series, BHŜŜ LB1WHFV series
Large Current 300mA
CMOS LDO Regulators
BH ŜŜ MA3WHFV Series
No.10020ECT02
Description
The BHŜŜFB1W, BHŜŜLB1W and BHŜŜMA3W series are low dropout CMOS regulators with 150 mA and 300 mA
output that have ±1% high accuracy output voltage.
The BHŜŜFB1W series combines 40µA low current consumption and a 70 dB high ripple rejection ratio by utilizing output
level CMOS technology. The components can be easily mounted into the small standard SSOP5 and the ultra-small
HVSOF5/HVSOF6 packages.
Features
1) High accuracy output voltage: ±1%
2) High ripple rejection ratio: 70 dB (BHŜŜFB1WHFV/WG, BHŜŜLB1WHFV/WG)
3) Low dropout voltage: 60 mV (when current is 100 mA) (BHŜŜMA3WHFV)
4) Stable with ceramic output capacitors
5) Low Bias current : 40µA (IO = 50 mA) (BHŜŜFB1WHFV/WG)
6) Output voltage ON/OFF control
7) Built-in over-current protection and thermal shutdown circuits
8) Ultra-small power package: HVSOF5 (BHŜŜFB1WHFV, BHŜŜLB1WHFV)
9) Ultra-small power package: HVSOF6 (BHŜŜMA3WHFV)
Applications
Battery-driven portable devices and etc.
Line up
150mA BHŜŜFB1W and BHŜŜLB1W Series
Part Number
1.5 1.8 1.85 2.5 2.8 2.9 3.0 3.1 3.3 Package
BHŜŜFB1WG
---
SSOP5
BHŜŜFB1WHFV - - -
HVSOF5
BHŜŜLB1WG
- - - - - - - SSOP5
BHŜŜLB1WHFV
- - - - - - HVSOF5
300mA BHŜŜMA3WHFV series
Part Number
1.5 1.8 2.5 2.8 2.9 3.0 3.1 3.3
Package
BHŜŜMA3WHFV
HVSOF6
Part Number: B H ŜŜ F B 1 W Ŝ , B H ŜŜ L B 1 W Ŝ
a ba b
Part Number: B H ŜŜ M A 3 W Ŝ
ab
Symbol
Details
Output Voltage Designation
ŜŜ Output Voltage (V) ŜŜ Output Voltage (V)
15 1.5V (Typ.) 29 2.9V (Typ.)
a 18 1.8V (Typ.) 30 3.0V (Typ.)
1J 1.85V (Typ.) 31
3.1V (Typ.)
25 2.5V (Typ.) 33 3.3V (Typ.)
28 2.8V (Typ.)
b Package: G : SSOP5 HFV : HVSOF5
Symbol
Details
Output Voltage Designation
ŜŜ Output Voltage (V) ŜŜ Output Voltage (V)
15 1.5V (Typ.) 29
2.9V (Typ.)
a
18 1.8V (Typ.) 30
3.0V (Typ.)
25 2.5V (Typ.) 31
3.1V (Typ.)
28 2.8V (Typ.) 33
3.3V (Typ.)
b Package: HFV : HVSOF6
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
1/8
2010.07 - Rev. C

1 Page





BH25FB1WG pdf, ピン配列
BH FB1WG series, BH FB1WHFV series,
BH LB1WG series, BH LB1WHFV series, BH MA3WHFV series
Technical Note
Typical characteristics
• Output voltage-input voltage
2
1.5
1
BH15LB1WHFV
~ Condition ~
VIN=0 to 5.5V
Cin=0.1μF
Co=1.0μF
ROUT=1.5kΩ
Ta=25°C
4
3
2
BH28FB1WHFV
~ Condition ~
VIN=0 to 5.5V
Cin=0.1μF
Co=1.0μF
ROUT=2.8kΩ
Ta=25°C
4
3
2
BH30MA3WHFV
~ Condition ~
VIN=0 to 5.5V
Cin=1.0μF
Co=1.0μF
Cn=none
ROUT=3.0kΩ
Ta=25°C
0.5 1
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Input Voltage VIN[V]
4.5 5 5.5
Fig.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Input Voltage VIN[V]
4.5 5 5.5
Fig.2
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Input Voltage VIN[V]
Fig.3
• GND current-input voltage
60
50
40
30
BH15LB1WHFV
~ Condition ~
VIN=0 to 5.5V
Cin=0.1μF
Co=1.0μF
ROUT=1.5kΩ
Ta=25°C
60
50
40
30
BH28FB1WHFV
~ Condition ~
VIN=0 to 5.5V
Cin=0.1μF
Co=1.0μF
ROUT=2.8kΩ
Ta=25°C
20 20
10 10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Input Voltage VIN[V]
Fig.4
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Input Voltage VIN[V]
Fig.5
100
80
60
40
BH30MA3WHFV
~ Condition ~
VIN=0 to 5.5V
Cin=1.0μF
Co=1.0μF
Cn=none
ROUT=3.0kΩ
Ta=25°C
20
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Input Voltage VIN[V]
Fig.6
• Output voltage-output current
2
1.5
1
0.5
0
0 100 200 300
Output Current IOUT[mA]
Fig.7
BH15LB1WHFV
~ Condition ~
VIN=3.5V
VOUT=1.53V to 0V
Cin=0.1μF
Co=1.0μF
Ta=25°C
3.5
3
2.5
2
1.5
BH28FB1WHFV
~ Condition ~
VIN=3.8V
VOUT=2.83V to 0V
Cin=0.1μF
Co=1.0μF
Ta=25°C
3.5
3
2.5
2
1.5
BH30MA3WHFV
~ Condition ~
VIN=4.0V
VOUT=3.03V to 0V
Cin=1.0μF
Co=1.0μF
Cn=none
Ta=25°C
11
0.5 0.5
0
400
0 50
100 150 200 250 300
Output Current IOUT[mA]
Fig.8
0
0 100 200 300 400 500 600 700
Output Current IOUT[mA]
Fig.9
• Dropout voltage-output current
500
400
300
200
100
0
0 50 100
Output Current IOUT[mA]
Fig.10
BH28FB1WHFV
~ Condition ~
VIN=2.74V
IOUT=0 to 150mA
Cin=0.1μF
Co=1.0μF
Ta=25°C
300
250
200
150
BH30MA3WHFV
~ Condition ~
VIN=2.940V
IOUT=0 to 300mA
Cin=1.0μF
Co=1.0μF
Cn=none
Ta=25°C
100
50
0
150 0 50 100 150 200 250 300
Output Current IOUT[mA]
Fig.11
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
3/8
2010.07 - Rev. C


3Pages


BH25FB1WG 電子部品, 半導体
BH FB1WG series, BH FB1WHFV series,
BH LB1WG series, BH LB1WHFV series, BH MA3WHFV series
Technical Note
Input capacitor
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors will be used when the power supply impedance increases or when long wiring routes are used, so
they should be checked once the IC has been mounted.
Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or
X7R or better models that offer good temperature and DC bias characteristics and high torelant voltages.
Examples of ceramic capacitor characteristics
120 100
100 95
50V torelance
80 90
60
10V torelance 16V torelance
40
85
80
50V torelance
16V torelance
10V torelance
120
100
80 X7R
X5R
60 Y5V
40
20 75 20
0
01234
70
01234
0
-25 0
25 50 75
DC bias Vdc (V)
Fig. 29: Capacitance-bias characteristics (Y5V)
DC bias Vdc (V)
Fig. 30: Capacitance-bias characteristics (X5R, X7R)
Temperature (°C)
Fig. 31: Capacitance–temperature characteristics
(X5R, X7R, Y5V)
Output capacitor
To prevent oscillation at the output, it is recommended that the IC be operated at the stable region show in below Fig. It
operates at the capacitance of more than 1.0μF. As capacitance is larger, stability becomes more stable and characteristic of
output load fluctuation is also improved.
BHŜŜLB1WHFV/WG
BHŜŜFB1WHFV/WG
BHŜŜMA3WHFV
Cout=1.0μF Ta=+25°C
100
Cout=2.2μF Ta=+25°C
100
100 Cout=1.0μF Cin=1.0μF
Ta=+25°C
10 10
10
1
Stable region
0.1
1
Stable region
0.1
1
Stable region
0.1
0.01
0
0.01
50 100 150
0
Output current IOUT(mA)
50 100
Output current IOUT(mA)
150
Fig. 32 BHŜŜLB1WHFV/WG
Stable operating region characteristics (Example)
Fig. 33 BHŜŜFB1WHFV/WG
Stable operating region characteristics (Example)
0.01
0
100 200
Output current IOUT(mA)
300
Fig. 34 BHŜŜMA3WHFV
Stable operating region characteristics (Example)
Other precautions
• Over current protection circuit
The IC incorporates a built-in over current protection circuit that operates according to the output current capacity. This circuit
serves to protect the IC from damage when the load is shorted. The protection circuits use fold-back type current limiting and
are designed to limit current flow by not latching up in the event of a large and instantaneous current flow originating from a
large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and
unexpected accidents. However, the IC should not be used in applications characterized by the continuous operation or
transitioning of the protection circuits.
• Thermal shutdown circuit
This system has a built-in thermal shutdown circuit for the purpose of protecting the IC from thermal damage. As shown
above, this must be used within the range of power dissipation, but if the power dissipation happens to be continuously
exceeded, the chip temperature increases, causing the thermal shutdown circuit to operate. When the thermal shutdown
circuit operates, the operation of the circuit is suspended. The circuit resumes operation immediately after the chip
temperature decreases, so the output repeats the ON and OFF states. There are cases in which the IC is destroyed due to
thermal runaway when it is left in the overloaded state. Be sure to avoid leaving the IC in the overloaded state.
• Actions in strong magnetic fields
Use caution when using the IC in the presence of a strong magnetic field as such environments may occasionally cause the chip
to malfunction.
• Back current
In applications where the IC may be exposed to back current flow, it is recommended to create a route t dissipate this current
by inserting a bypass diode between the VIN and VOUT pins.
• GND potential
Ensure a minimum GND pin potential in all operating conditions.
In addition, ensure that no pins other than the GND pin carry a voltage less than or equal to the GND pin, including during
actual transient phenomena.
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
6/8
2010.07 - Rev. C

6 Page



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部品番号部品説明メーカ
BH25FB1WG

Standard CMOS LDO Regulators

ROHM Semiconductor
ROHM Semiconductor
BH25FB1WHFV

Standard CMOS LDO Regulators

ROHM Semiconductor
ROHM Semiconductor


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