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PDF IPA65R1K0CE Data sheet ( Hoja de datos )
| Número de pieza | IPA65R1K0CE | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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IPA65R1K0CE
MOSFET
650VCoolMOS™CEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PCSilverbox,Adapters,LCD&PDPTVandindoorLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Id.typ
Qg.typ
ID,pulse
Eoss@400V
700
1000
7.2
15.3
12
1.5
V
mΩ
A
nC
A
µJ
Type/OrderingCode
IPA65R1K0CE
Package
PG-TO 220 FullPAK
Marking
65S1K0CE
TO-220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-19
1 page  
650VCoolMOS™CEPowerTransistor
IPA65R1K0CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance,
energy related1)
Effective output capacitance,
time related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
650
2.5
-
-
-
-
-
-
Values
Typ. Max.
--
3.0 3.5
-1
10 -
- 100
0.86 1.00
2.22 -
5.5 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=0.2mA
µA
VDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
Ω
VGS=10V,ID=1.5A,Tj=25°C
VGS=10V,ID=1.5A,Tj=150°C
Ω f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
328 -
23 -
14 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...480V
- 58.5 - pF ID=constant,VGS=0V,VDS=0...480V
-
6.6 -
ns
VDD=400V,VGS=13V,ID=2.2A,
RG=10.2Ω;seetable9
-
5.2 -
ns
VDD=400V,VGS=13V,ID=2.2A,
RG=10.2Ω;seetable9
-
41 -
ns
VDD=400V,VGS=13V,ID=2.2A,
RG=10.2Ω;seetable9
-
13.6 -
ns
VDD=400V,VGS=13V,ID=2.2A,
RG=10.2Ω;seetable9
Min.
-
-
-
-
Values
Typ. Max.
1.8 -
8-
15.3 -
5.4 -
Unit Note/TestCondition
nC VDD=480V,ID=2.2A,VGS=0to10V
nC VDD=480V,ID=2.2A,VGS=0to10V
nC VDD=480V,ID=2.2A,VGS=0to10V
V VDD=480V,ID=2.2A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
Final Data Sheet
5 Rev.2.0,2016-02-19
5 Page 
650VCoolMOS™CEPowerTransistor
IPA65R1K0CE
Diagram17:Typ.Cossstoredenergy
2.0
Diagram18:Typ.capacitances
104
1.5 103
Ciss
1.0 102
Coss
0.5 101
Crss
0.0
0
100
100 200 300 400 500
0
VDS[V]
100 200 300 400 500
VDS[V]
Eoss=f(VDS)
C=f(VDS);VGS=0V;f=1MHz
Diagram19:Drain-sourcebreakdownvoltage
750
730
710
690
670
650
630
610
590
570
550
-75 -50 -25 0
VBR(DSS)=f(Tj);ID=1.0mA
25 50 75 100 125 150 175
Tj[°C]
Final Data Sheet
11 Rev.2.0,2016-02-19
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IPA65R1K0CE.PDF ] | |
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