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PDF AUIRF7304Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7304Q | |
| Descripción | Dual P Channel MOSFET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Features
Advanced Planar Technology
Low On-Resistance
Dual P Channel MOSFET
Dynamic dv/dt Rating
Logic Level
150°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified *
AUTOMOTIVE GRADE
AUIRF7304Q
S1
G1
S2
G2
1
2
3
4
8 D1
7 D1
6 D2
5 D2
Top View
HEXFET® Power MOSFET
VDSS
-20V
RDS(on) max.
ID
0.090
-4.3A
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance
per silicon area. This benefit combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
SO-8
AUIRF7304Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7304Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7304QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
-4.7
-4.3
-3.4
-17
2.0
0.016
± 12
-5.0
-55 to + 150
Units
A
W
W°/C
V
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJA Junction-to-Ambient
Typ.
–––
Max.
62.5
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-11-16
1 page  
AUIRF7304Q
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC, Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 2015-11-16
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7304Q.PDF ] | |
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