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PDF AUIRF7313Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7313Q | |
| Descripción | Dual N Channel MOSFET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Features
Advanced Planar Technology
Dual N Channel MOSFET
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified *
AUTOMOTIVE GRADE
AUIRF7313Q
S1
G1
S2
G2
1
2
3
4
8 D1
7 D1
6 D2
5 D2
Top View
VDSS
RDS(on)
typ.
max.
ID
30V
23m
29m
6.9A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
SO-8
AUIRF7313Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7313Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7313QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
dv/dt
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
30
6.9
5.8
58
2.4
0.02
± 20
450
3.6
-55 to + 175
Units
V
A
W
W/°C
V
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJL Junction-to-Drain Lead
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
2015-9-30
1 page  
80
70
60
50
40
30
20
10
0
VGS= 4.5V
VGS= 10V
10 20 30 40
ID , Drain Current (A)
50
60
Fig 12. Typical On-Resistance Vs. Drain
Current
AUIRF7313Q
70
ID = 3.5A
60
50
40
TJ = 125°C
30
20
10
0
TJ = 25°C
4 8 12 16
VGS, Gate-to-Source Voltage (V)
20
Fig 13. Typical On-Resistance Vs. Gate
Voltage
5 2015-9-30
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7313Q.PDF ] | |
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