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AUIRF7341QのメーカーはInfineonです、この部品の機能は「Dual N Channel MOSFET」です。 |
部品番号 | AUIRF7341Q |
| |
部品説明 | Dual N Channel MOSFET | ||
メーカ | Infineon | ||
ロゴ | |||
このページの下部にプレビューとAUIRF7341Qダウンロード(pdfファイル)リンクがあります。 Total 10 pages
AUTOMOTIVE GRADE
AUIRF7341Q
Features
Advanced Planar Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dual N Channel MOSFET
Surface Mount
Available in Tape & Reel
175°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
S1
G1
S2
G2
1
2
3
4
8 D1
7 D1
6 D2
5 D2
Top View
Description
Specifically designed for Automotive applications, these HEXFET® Power
MOSFET's in a Dual SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and
dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
G
Gate
VDSS
RDS(on) typ.
max.
ID
SO-8
AUIRF7341Q
D
Drain
55V
0.043
0.050
5.1A
S
Source
Base part number
AUIRF7341Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7341QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Max.
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig.17, 18, 15a, 15b
-55 to + 175
Units
V
A
W
mW/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
Parameter
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
62.5
Units
°C/W
2015-9-30
1 Page 100
VGS
TOP
15.0V
10.0V
7.0V
5.5V
4.5V
10
4.0V
3.5V
BOTTOM 2.7V
2.7V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig. 1 Typical Output Characteristics
AUIRF7341Q
100
VGS
TOP
15.0V
10.0V
7.0V
5.5V
4.5V
10
4.0V
3.5V
2.7V
BOTTOM 2.7V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig. 2 Typical Output Characteristics
100
TJ = 25 °C
TJ = 175 °C
10
V DS= 25V
20µs PULSE WIDTH
1
2.0 3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
2.5 ID = 5.2A
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2015-9-30
3Pages AUIRF7341Q
Fig 12. Typical On-Resistance Vs. Gate Voltage
Vds
Id
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 14a. Basic Gate Charge Waveform
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 15a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
I AS
Fig 15b. Unclamped Inductive Waveforms
6
Fig 13. Typical On-Resistance Vs. Drain Current
Fig 14b. Gate Charge Test Circuit
400
ID
TOP 2.1A
4.3A
320
BOTTOM
5.1A
240
160
80
0
25 50 75 100
Starting Tj, Junction Temperature
125 150
( °C)
175
Fig 16. Maximum Avalanche Energy
vs. Drain Current
2015-9-30
6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
AUIRF7341Q | Dual N Channel MOSFET | Infineon |
AUIRF7341Q | Power MOSFET ( Transistor ) | International Rectifier |