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PDF PXFC193808SV Data sheet ( Hoja de datos )
| Número de pieza | PXFC193808SV | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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PXFC193808SV
Thermally-Enhanced High Power RF LDMOS FET
380 W, 28 V, 1805 – 1880 MHz
Description
The PXFC193808SV is a 380-watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 1805 to 1880
MHz frequency band. Features include input and output matching,
high gain and a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PXFC193808SV
Package H-37275G-6/2
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 2850 mA, ƒ = 1880 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
24
60
20 Gain
16
12
40
Efficiency
20
0
8 -20
4
PAR @ 0.01% CCDF
-40
0 -60c193808sv-gr1c
25 30 35 40 45 50 55
Average Output Power (dBm)
Features
• Broadband internal input and output matching
• Typical pulsed CW performance, 1842.5 MHz, 28 V,
- Output power at P1dB = 380 W
- Efficiency = 54.9%
- Gain = 21 dB
• Integrated ESD protection
• ESD: Human Body Model, Class 2 (per ANSI/
ESDA/JEDEC JS-001)
• Capable of handling 10:1 VSWR @28 V, 200 W
(1-C WCDMA) output power
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ = 2880 mA, POUT = 80 W avg, ƒ = 1880 MHz.
3GPP signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% probability on CCDF.
Characteristic
Symbol Min Typ
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
ηD
ACPR
19.5 21
28.5 30.3
— –33.5
Max
—
—
–32
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2015-01-13
1 page  
PXFC193808SV
Typical Performance (cont.)
Pulsed CW Performance
at selected VDD
IDQ = 2850 mA, ƒ = 1880 MHz
24 70
22
Gain
20
VDD = 24 V
18 VDD = 28 V
VDD = 32 V
16
60
50
40
30
14 20
Efficiency
12 10
10
c193808sv-gr5c
0
33 37 41 45 49 53 57 61
Output Power (dBm)
CW Performance Small Signal
Gain & Input Return Loss
VDD = 28 V, IDQ = 3500 mA
24 0
22 -5
20
Gain
18
-10
-15
16 -20
14 -25
12
Return Loss
-30
10
c193808sv-gr6
-35
1650 1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
See next page for circuit impedance and device load pull performance
Data Sheet
5 of 10
Rev. 02.1, 2015-01-13
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PXFC193808SV.PDF ] | |
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