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Número de pieza | PXAC241702FC | |
Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PXAC241702FC (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! PXAC241702FC
Thermally-Enhanced High Power RF LDMOS FET
150 W, 28 V, 2300 – 2400 MHz
Description
The PXAC241702FC is a 28 V LDMOS FET with an asymm etrical
design intended for use in multi-standard cellular power amplifier
applications in the 2300 to 2400 MHz frequency band. Features in-
clude dual-path design, high gain and thermally-enhanced package
with earless flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PXAC241702FC
Package H-37248-4
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 360 mA, ƒ = 2300 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz BW
24
Efficiency
20
16 Gain
75
50
25
12 0
8
PAR @ 0.01% CCDF
4
-25
-50
0 -75c241702fc-gr1a
25 30 35 40 45 50 55
Features
• Asymmetrical Doherty design
- Main: P1dB = 60 W Typ
- Peak: P1dB = 90 W Typ
• Broadband internal input and output matching
• Typical pulsed CW performance, 2350 MHz, 28 V,
Doherty configuration
- Output power at P1dB = 100 W
- Efficiency = 49%
- Gain = 17.5 dB
• Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
• Capable of handling 10:1 VSWR @28 V, 120 W
(CW) output power
• Low thermal resistance
• Pb-free and RoHS compliant
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ(main) = 360 mA, VGS(peak) = 1.2 V, POUT = 28 W avg, ƒ = 2400 MHz. 3GPP signal, 3.84 MHz
channel bandwidth, 10 dB peak/average @ 0.01% probability on CCDF.
Characteristic
Symbol Min Typ Max
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
hD
ACPR
15.5
46
—
16.5
52
–33.5
—
—
–28.0
Output PAR (at 0.01% probability on CCDF)
OPAR
6.5 7.5
—
Unit
dB
%
dBc
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2016-06-22
1 page Typical Performance (cont.)
CW Performance, single side
Small Signal Gain & Input Return Loss,
VDD = 28 V, IDQ = 360 mA
25 0
20
Gain
15
-5
-10
10 -15
IRL
5 -20
0
2200
2300
2400
Frequency (MHz)
c241702fc-gr7
2500
-25
See next page for load pull performance
PXAC241702FC
Data Sheet
5 of 10
Rev. 02.1, 2016-06-22
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet PXAC241702FC.PDF ] |
Número de pieza | Descripción | Fabricantes |
PXAC241702FC | Thermally-Enhanced High Power RF LDMOS FET | Infineon |
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