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PDF PXAC201602FC Data sheet ( Hoja de datos )
| Número de pieza | PXAC201602FC | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
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PXAC201602FC
Thermally-Enhanced High Power RF LDMOS FET
140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz
Description
The PXAC201602FC is a 140-watt LDMOS FET for use in multi-
standard cellular power amplifier applications in the 1880 to 1920
MHz and 2010 to 2025 MHz frequency bands. It features input and
output matching, and a thermally-enhanced package with earless
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PXAC201602FC
Package H-37248-4
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz
3GPP WCDMA signal:
10 dB PAR, 3.84 MHz BW
24
60
20 Efficiency 40
16 Gain
20
12
8 PAR @ 0.01% CCDF
0
-20
4 -40
0
25
30 35 40 45
Average Output Power (dBm)
c201602fc-gr1a
-60
50
Features
• Asymmetric Doherty design
- Main: 55 W Typ (P1dB)
- Peak: 85 W Typ (P1dB)
• Broadband internal matching
• Pulsed CW performance, 1960 MHz, 28 V
- Output power at P1dB = 100 W
- Gain = 18 dB
- Efficiency = 55%
• Capable of handling 10:1 VSWR @ 28 V, 140 W
(CW) output power
• Integrated ESD protection
• Human Body Model Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
• Can be operated with IDQ of up to 700 mA
(not to exceed maximum ratings limits)
RF Specifications
Single-carrier WCDMA Characteristics (tested in Infineon Doherty test fixture)
VDD = 28 V, VGS(PEAK) = 1.4 V, IDQ = 360 mA, POUT = 22.5 W average, ƒ = 2025 MHz, 3GPP WCDMA signal, channel band-
width = 3.84 MHz, 10 dB PAR @0.01% CCDF.
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps 16.5 17.7 — dB
hD 41 44 — %
Adjacent Channel Power Ratio
ACPR
— –28 –26 dBc
Output PAR @ 0.01% CCDF 1880 MHz
OPAR 7.0 —
— dB
Output PAR @ 0.01% CCDF 2025 MHz
OPAR 7.8 —
— dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 04.1, 2016-07-19
1 page  
PXAC201602FC
Load Pull Performance
Z Source
G1
G2
D1 Z Load
S
D2
Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 360 mA
Class AB
Max Output Power
P1dB
Freq
[MHz]
Zs
[W]
Zl
Gain
POUT POUT
PAE
Zl
[W]
[dB] [dBm] [W]
[%]
[W]
1880 3.88 – j12.84 3.96 – j4.18 20.01 48.39 69.02 54.18 7.54 – j1.33
1900 5.30 – j12.89 4.14 – j4.36 20.21 48.1 64.57 53.31 7.70 – j1.56
1920 5.84 – j14.94 4.13 – j4.48 20.33 48.32 67.92 55.15 7.03 – j0.76
2010 11.80 – j17.15 3.84 – j4.53 20.31 48.36 68.55 55.74 5.79 – j0.62
2025 12.09 – j16.26 3.99 – j4.73
20.4 48.14 65.16 54.0.3 5.26 – j0.81
Max PAE
Gain
[dB]
POUT
[dBm]
22.43 46.72
22.38 46.36
22.6 46.41
22.76 46.22
22.7 46.17
POUT
[W]
46.99
43.25
43.75
41.88
41.40
PAE
[%]
65.35
61.53
63.54
64.2
62.49
Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 540 mA
Class AB
Max Output Power
P1dB
Freq
[MHz]
Zs
[W]
Zl
Gain
POUT POUT
PAE
Zl
[W]
[dB] [dBm] [W]
[%]
[W]
1880 4.62 – j9.02 2.53 – j4.95 19.44 50.31 107.40 54.66 5.39 – j2.83
1900 5.10 – j8.97 2.65 – j4.91 19.87 49.97 99.31 53.40 4.50 – j3.28
1920 6.65 – j8.28 2.587 – j5.03 19.82 50.07 101.62 53.76 4.31 – j3.12
2010 10.61 – j5.85 2.48 – j5.17 20.19 50.19 104.47 53.45 3.80 – j3.47
2025 12.35 – j5.04 2.48 – j5.64 20.34 50.09 102.09 52.31 3.83 – j3.38
Max PAE
Gain
[dB]
POUT
[dBm]
22.15 48.15
21.90 48.47
21.93 48.54
22.46 48.61
22.70 48.26
POUT
[W]
65.31
70.31
71.45
72.61
66.99
PAE
[%]
64.38
61.18
62.86
63.49
61.23
Reference Circuit, tuned for 1800 – 2200 MHz
DUT
PXAC201602FC V1
Reference Circuit Part No. LTA/PXAC201602FC V1
PCB
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66
Find Gerber files for this reference fixture on the Infineon Web site at (www.infineon.com/rfpower)
Data Sheet
5 of 9
Rev. 04.1, 2016-07-19
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PXAC201602FC.PDF ] | |
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