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PTVA120501EA の電気的特性と機能

PTVA120501EAのメーカーはInfineonです、この部品の機能は「Thermally-Enhanced High Power RF LDMOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 PTVA120501EA
部品説明 Thermally-Enhanced High Power RF LDMOS FET
メーカ Infineon
ロゴ Infineon ロゴ 




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PTVA120501EA Datasheet, PTVA120501EA PDF,ピン配置, 機能
PTVA120501EA
Thermally-Enhanced High Power RF LDMOS FET
50 W, 50 V, 1200 – 1400 MHz
Description
The PTVA120501EA LDMOS FET is designed for use in power ampli-
fier applications in the 1200 to 1400 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA120501EA
Package H-36265-2
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,
300 µs pulse width, 10% duty cycle
60
55
50
45
40
35
30
18
70
Efficiency
60
Output Power
50
40
1200 MHz
30
1300 MHz
20
1400 MHz
10
a120501ea_g1-1
22 26 30 34 38
PIN (dBm)
Features
• Broadband input matching
• High gain and efficiency
• Typical Pulsed CW performance, 1200 – 1400MHz,
50 V, 300 µs pulse width, 10 % duty cycle, class AB
- Output power at P1dB = 54 W
- Efficiency = 55%
- Gain = 16 dB
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at 50 W peak under RF pulse,
300 μS, 10% duty cycle.
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture)
VDD = 50 V, IDQ = 50 mA, POUT = 50 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 MHz, 300 µs pulse width, 10 % duty cycle
Characteristic
Gain
Drain Efficiency
Return Loss
Symbol
Gps
hD
IRL
Min
16.5
46
Typ
17
50
–10
Max
–7
Unit
dB
%
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2016-05-26

1 Page





PTVA120501EA pdf, ピン配列
PTVA120501EA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 50 W CW)
Ordering Information
Type and Version
PTVA120501EA V1 R0
PTVA120501EA V1 R2
Order Code
PTVA120501EAV1R0XTMA1
PTVA120501EAV1R2XTMA1
Symbol
VDSS
VGS
TJ
TSTG
RqJC
Value
105
–6 to +12
200
–65 to +150
1.37
Unit
V
V
°C
°C
°C/W
Package Description
H-36265-2, bolt-down
H-36265-2, bolt-down
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Typical Performance (data taken in a production test fixture)
Pulsed CW Performance
VDD = 50 V, IDQ = 50 mA
19 70
18 60
17 Gain
50
16 40
15
14
13
36
1400 MHz
Efficiency
1200 MHz
1300 MHz
38
40
42
44
a120501ea_gcw-1
46
Output Power (dBm)
30
20
10
48
Small Signal CW Performance
Gain & Input Return Loss
VDD = 50 V, IDQ = 1.5 A
19 -1
Gain
17 -5
15 -9
13 -13
11 IRL
-17
9
950
1050
1150 1250 1350
Frequency (MHz)
a120501ea_gcw-2
-21
1450 1550
Data Sheet
3 of 10
Rev. 02.1, 2016-05-26


3Pages


PTVA120501EA 電子部品, 半導体
PTVA120501EA
Broadband Circuit Impedance
Z Source
D
Z Load
Freq
[MHz]
1200
1300
1400
G
S
Z Source W
R jX
8.07 –2.13
5.13 –0.95
5.64 2.24
Z Load W
R jX
3.66 4.97
3.90 4.56
3.25 5.36
Load Pull Performance
Load Pull at Max POUT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 50 mA
Freq
Zl
PIN
POUT
POUT
PG
[MHz]
[W]
[dBm]
[dBm]
[W]
[dB]
1200
3.04 – j2.16
30.68
47.30
53.70
16.62
PAE Eff
[%]
45.56
ZOUT
[W]
3.19 – j1.55
Load Pull at Max GT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 50 mA
Freq
Zl
PIN
POUT
POUT
PG
[MHz]
[W]
[dBm]
[dBm]
[W]
[dB]
1200
3.04 – j2.16
27.50
46.10
40.74
18.60
PAE Eff
[%]
57.50
ZOUT
[W]
2.88 – j4.11
Load Pull at Max Efficiency Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 50 mA
Freq
Zl
PIN
POUT
POUT
PG PAE Eff
[MHz]
[W]
[dBm]
[dBm]
[W]
[dB]
[%]
1200
3.04 – j2.16
27.55
46.15
41.21
18.60
57.20
Z Optimum – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 50 mA
Freq
Zl
PIN
POUT
POUT
[MHz]
[W]
[dBm]
[dBm]
[W]
1200
3.04 – j2.16
28.70
46.57
45.39
PG
[dB]
17.87
PAE Eff
[%]
50.46
ZOUT
[W]
2.88 – j4.06
ZOUT
[W]
2.92 – j3.12
Data Sheet
6 of 10
Rev. 02.1, 2016-05-26

6 Page



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部品番号部品説明メーカ
PTVA120501EA

Thermally-Enhanced High Power RF LDMOS FET

Infineon
Infineon


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