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PTVA104501EH の電気的特性と機能

PTVA104501EHのメーカーはInfineonです、この部品の機能は「Thermally-Enhanced High Power RF LDMOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 PTVA104501EH
部品説明 Thermally-Enhanced High Power RF LDMOS FET
メーカ Infineon
ロゴ Infineon ロゴ 




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PTVA104501EH Datasheet, PTVA104501EH PDF,ピン配置, 機能
PTVA104501EH
Thermally-Enhanced High Power RF LDMOS FET
450 W, 50 V, 960 – 1215 MHz
Description
The PTVA104501EH LDMOS FET is designed for use in power ampli-
fier applications in the 960 to 1215 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA104501EH
Package H-33288-2
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 200 mA, TCASE = 25°C,
128 µs pulse width, 10% duty cycle
65
Output power
Efficiency
55
65
55
45 45
35
960 MHz
35
1030 Mhz
25 1090 MHz 25
1150 MHz
1215 MHz
15
a104501eh_g1
15
28 30 32 34 36 38 40 42 44
PIN (dBm)
Features
Broadband internal input and output matching
High gain and efficiency
Integrated ESD protection
Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
Low thermal resistance
Excellent ruggedness
Pb-free and RoHS compliant
Capable of withstanding a 10:1 load mismatch
(all phase angles) at 450 W peak under RF pulse,
128 µS, 10% duty cycle.
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture) (tested in Infineon test fixture)
VDD = 50 V, IDQ = 200 mA, POUT = 450 W (peak), ƒ1 = 960 MHz, ƒ2 = 1090 MHz, ƒ3 = 1215 MHz, RF pulse 128 µs,
10% duty cycle
Characteristic
Gain
Drain Efficiency
Gain Flatness
Return Loss
Symbol
Gps
hD
DG
IRL
Min
16.5
53
Typ
17.5
58
0.85
–9.5
Max
1.8
–6
Unit
dB
%
dB
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 02.1, 2016-04-19

1 Page





PTVA104501EH pdf, ピン配列
PTVA104501EH
Typical RF Performance (data taken in production test fixture)
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 200 mA, TCASE = 25°C,
128 µs pulse width, 10% duty cycle
65
Output power
Efficiency
55
65
55
45 45
35
960 MHz
35
1030 Mhz
25 1090 MHz 25
1150 MHz
1215 MHz
15
a104501eh_g1
15
28 30 32 34 36 38 40 42 44
PIN (dBm)
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 200 mA, TCASE = 25°C,
128 µs pulse width, 10% duty cycle
22
20 Gain
18
16
960 MHz
1030 MHz
14 1090 MHz
1150 MHz
12
1215 MHz
a104501eh_g2
28 30 32 34 36 38 40 42 44
PIN (dBm)
Pulsed RF Performance
VDD = 50V, IDQ = 200mA, POUT= 450W (peak),
128 µs pulse width, 10% duty cycle
20 70
Gain
19 65
18
Efficiency
17
60
55
16
900
1000
1100
1200
Frequency (MHz)
a104501eh_g3
50
1300
Pulsed RF Performance
VDD = 50V, IDQ = 200mA, POUT= 450W (peak),
128 µs pulse width, 10% duty cycle
-5 0.3
IRL
-10
0.2
-15
0.1
-20 Power Droop
-25
900
1000
1100
1200
Frequency (MHz)
a104501eh_g4
0.0
1300
Data Sheet
3 of 9
Rev. 02.1, 2016-04-19


3Pages


PTVA104501EH 電子部品, 半導体
PTVA104501EH
Reference Circuit
R103
S3
R102
C108 C109
R106 C107
C110 R105C111
R101
S2
C101
R104
S1
C103
RF_IN
C104
C106
C102
C210
C211
C208
C204
R201
RO3010,025 (62)
VDD
C202
C206
C201
C209
RF_OUT
C105
VDD
C203
R202
C207
PTVA104501EH_IN_02 RO3010,025 (62)
Reference circuit assembly diagram (not to scale)
Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower
C205
PTVA104501EH_OUT_02
ptva104501eh_CD_07-21-2014
Data Sheet
6 of 9
Rev. 02.1, 2016-04-19

6 Page



ページ 合計 : 9 ページ
 
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部品番号部品説明メーカ
PTVA104501EH

Thermally-Enhanced High Power RF LDMOS FET

Infineon
Infineon


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