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PTVA104501EHのメーカーはInfineonです、この部品の機能は「Thermally-Enhanced High Power RF LDMOS FET」です。 |
部品番号 | PTVA104501EH |
| |
部品説明 | Thermally-Enhanced High Power RF LDMOS FET | ||
メーカ | Infineon | ||
ロゴ | |||
このページの下部にプレビューとPTVA104501EHダウンロード(pdfファイル)リンクがあります。 Total 9 pages
PTVA104501EH
Thermally-Enhanced High Power RF LDMOS FET
450 W, 50 V, 960 – 1215 MHz
Description
The PTVA104501EH LDMOS FET is designed for use in power ampli-
fier applications in the 960 to 1215 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA104501EH
Package H-33288-2
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 200 mA, TCASE = 25°C,
128 µs pulse width, 10% duty cycle
65
Output power
Efficiency
55
65
55
45 45
35
960 MHz
35
1030 Mhz
25 1090 MHz 25
1150 MHz
1215 MHz
15
a104501eh_g1
15
28 30 32 34 36 38 40 42 44
PIN (dBm)
Features
• Broadband internal input and output matching
• High gain and efficiency
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Excellent ruggedness
• Pb-free and RoHS compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at 450 W peak under RF pulse,
128 µS, 10% duty cycle.
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture) (tested in Infineon test fixture)
VDD = 50 V, IDQ = 200 mA, POUT = 450 W (peak), ƒ1 = 960 MHz, ƒ2 = 1090 MHz, ƒ3 = 1215 MHz, RF pulse 128 µs,
10% duty cycle
Characteristic
Gain
Drain Efficiency
Gain Flatness
Return Loss
Symbol
Gps
hD
DG
IRL
Min
16.5
53
—
—
Typ
17.5
58
0.85
–9.5
Max
—
—
1.8
–6
Unit
dB
%
dB
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 02.1, 2016-04-19
1 Page PTVA104501EH
Typical RF Performance (data taken in production test fixture)
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 200 mA, TCASE = 25°C,
128 µs pulse width, 10% duty cycle
65
Output power
Efficiency
55
65
55
45 45
35
960 MHz
35
1030 Mhz
25 1090 MHz 25
1150 MHz
1215 MHz
15
a104501eh_g1
15
28 30 32 34 36 38 40 42 44
PIN (dBm)
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 200 mA, TCASE = 25°C,
128 µs pulse width, 10% duty cycle
22
20 Gain
18
16
960 MHz
1030 MHz
14 1090 MHz
1150 MHz
12
1215 MHz
a104501eh_g2
28 30 32 34 36 38 40 42 44
PIN (dBm)
Pulsed RF Performance
VDD = 50V, IDQ = 200mA, POUT= 450W (peak),
128 µs pulse width, 10% duty cycle
20 70
Gain
19 65
18
Efficiency
17
60
55
16
900
1000
1100
1200
Frequency (MHz)
a104501eh_g3
50
1300
Pulsed RF Performance
VDD = 50V, IDQ = 200mA, POUT= 450W (peak),
128 µs pulse width, 10% duty cycle
-5 0.3
IRL
-10
0.2
-15
0.1
-20 Power Droop
-25
900
1000
1100
1200
Frequency (MHz)
a104501eh_g4
0.0
1300
Data Sheet
3 of 9
Rev. 02.1, 2016-04-19
3Pages PTVA104501EH
Reference Circuit
R103
S3
R102
C108 C109
R106 C107
C110 R105C111
R101
S2
C101
R104
S1
C103
RF_IN
C104
C106
C102
C210
C211
C208
C204
R201
RO3010,025 (62)
VDD
C202
C206
C201
C209
RF_OUT
C105
VDD
C203
R202
C207
PTVA104501EH_IN_02 RO3010,025 (62)
Reference circuit assembly diagram (not to scale)
Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower
C205
PTVA104501EH_OUT_02
ptva104501eh_CD_07-21-2014
Data Sheet
6 of 9
Rev. 02.1, 2016-04-19
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ PTVA104501EH データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
PTVA104501EH | Thermally-Enhanced High Power RF LDMOS FET | Infineon |