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What is PTFC260202FC?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "Thermally-Enhanced High Power RF LDMOS FET".


PTFC260202FC Datasheet PDF - Infineon

Part Number PTFC260202FC
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturers Infineon 
Logo Infineon Logo 


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PTFC260202FC
Thermally-Enhanced High Power RF LDMOS FET
25 W, 28 V, 2495 – 2690 MHz
Description
The PTFC260202FC integrates two independent 10-watt LDMOS
FETs and is designed for use in cellular amplifier applications in the
2495 to 2690 MHz frequency band. Manufactured with Infineon's
advanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PTFC260202FC
Package H-37248-4
Two-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 0.17 A, ƒ = 2620 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
20 50
19
Gain
18
40
30
17
Efficiency
20
16 10
15 0
30 31 32 33 34 35 36 37 38 39 40
Output Power (dBm)
Features
• Broadband input matching
• Typical CW performance, 2620 MHz, 28 V
- Output power at P1dB = 25 W
- Efficiency = 57%
- Linear Gain = 19.4 dB
• Capable of handling 10:1 VSWR @28 V, 25 W
(CW) output power
• Integrated ESD protection
• Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 28 V, IDQ = 170 mA, POUT = 5 W avg, ƒ1 = 2615 MHz, ƒ2 = 2625 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
hD
IMD
Min
19
27.5
Typ
20
30
–31.5
Max
–30
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 03.3, 2016-06-21

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PTFC260202FC equivalent
PTFC260202FC
Reference Circuit
TL213
Drain_DUT
Pin D1
TL256
TL248
2
TL208 3
1
C201
15 pF
TL201
TL223
12
3
C210
10000000 pF
TL214
TL211
TL206
3
21
TL210
12
3
C203
1 pF
TL251
R201
100 Ohm
TL222
TL207
12
3
C202
1.6 pF
TL209
3
21
TL225
TL219
TL224
TL220
12
3
C209
100000000 pF
TL221
TL250 TL226
TL241
TL203
TL240
TL249
TL254
TL246 2 3
1
TL252
TL242
TL205
TL239
Drain_DUT
Pin D2
TL234
TL233
21
3
TL236 TL231
3
12
C207
1 pF TL202
TL255
TL232
21
3
TL204
TL245
C208
100000000 pF
TL235
1
TL230 3
2
C205
15 pF
TL243
TL244
C204
10000000 pF
TL247
TL228
3
12
C206
1.6 pF
TL218 TL216
TL227
3
12
TL217
TL215
c260202fc_bdout_09-13-2012
TL229
3
12
TL237
TL253 TL238 TL212
RF_OUT
εr = 3.66
H = 30 mil
RO/RO4350
Reference circuit output schematic for ƒ = 2680 MHz
Data Sheet
5 of 9
Rev. 03.3, 2016-06-21


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for PTFC260202FC electronic component.


Information Total 9 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
PTFC260202FCThe function is Thermally-Enhanced High Power RF LDMOS FET. InfineonInfineon

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