Datasheet PTFC261402FC Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	PTFC261402FC	Thermally-Enhanced High Power RF LDMOS FET PTFC261402FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 – 2690 MHz Description The PTFC261402FC is a 140-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 2620 to 2690 MHz frequency band. Features include input and output matching,	Infineon	data

PTF Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	PTF	Metal Film Resistors www.vishay.com PTF Vishay Dale Metal Film Resistors, High Precision, High Stability FEATURES • Extremely low temperature coefficient of resistance • Very low noise and voltage coefficient • Very good high frequency characteristics • Can replace wirewound bobbins • Proprietary epoxy coat	Vishay	data
2	PTF080101	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ	Infineon Technologies AG	transistor
3	PTF080101S	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ	Infineon Technologies AG	transistor
4	PTF080451	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • • B	Infineon Technologies AG	transistor
5	PTF080451E	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • • B	Infineon Technologies AG	transistor
6	PTF080601	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typ	Infineon Technologies AG	transistor
7	PTF080601A	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typ	Infineon Technologies AG	transistor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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