DataSheet.jp

PTFC262157FH の電気的特性と機能

PTFC262157FHのメーカーはInfineonです、この部品の機能は「Thermally-Enhanced High Power RF LDMOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 PTFC262157FH
部品説明 Thermally-Enhanced High Power RF LDMOS FET
メーカ Infineon
ロゴ Infineon ロゴ 




このページの下部にプレビューとPTFC262157FHダウンロード(pdfファイル)リンクがあります。

Total 10 pages

No Preview Available !

PTFC262157FH Datasheet, PTFC262157FH PDF,ピン配置, 機能
PTFC262157FH
Thermally-Enhanced High Power RF LDMOS FET
200 W, 28 V, 2620 – 2690 MHz
Description
The PTFC262157FH LDMOS FET is designed for use in Doherty
cellular power applications in the 2620 MHz to 2690 MHz frequency
band. Input and output matching have been optimized for maximum
performance as the peak side transistor in a Doherty amplifier. Other
features include a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFC262157FH
Package H-34288G-4/2
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1200 mA, ƒ = 2620 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21 50
20 40
19 30
18 Gain
17
16
32
Efficiency
36 40 44 48
Output Power (dBm)
20
10
c262157sh-gr1
52
0
Features
Broadband internal matching, optimized for Doherty
peak side
Wide video bandwidth
Typical single-carrier WCDMA performance, 2690
MHz, 28 V, 10 dB PAR @ 0.01% CCDR
- Output power at P1dB = 50 W
- Efficiency = 29%
- Gain = 19.5 dB
- ACPR = –31.5 dBc at 2690 MHz
Capable of handling 10:1 VSWR @ 28 V,
180 W (CW) output power
Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
Low thermal resistance
Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1150 mA, POUT = 50 W average, ƒ = 2690 MHz, 3GPP WCDMA signal, 3.84 MHz bandwidth,10 dB PAR
@0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Gps
18.0 19.5
dB
Drain Efficiency
Adjacent Channel Power Ratio
hD
ACPR
27 29
— –31.5
–30
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.1, 2016-06-21

1 Page





PTFC262157FH pdf, ピン配列
PTFC262157FH
Typical Performance (data taken in a reference test fixture)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1200 mA, ƒ = 2655 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21 50
20 40
19
Gain
18
30
20
17
16
32
Efficiency
36 40 44 48
Output Power (dBm)
10
c262157sh-gr2
0
52
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1200 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21 50
20 40
19
Gain
18
30
20
17
16
32
Efficiency
36 40 44 48
Output Power (dBm)
10
c262157sh-gr3
0
52
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1200 mA, ƒ = 2620 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
IMD Low
IMD Up
ACPR
Efficiency
-30
60
40
-40 20
-50
32
36 40 44 48
Output Power (dBm)
c262157sh-gr4
0
52
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1200 mA, ƒ = 2655 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
IMD Low
IMD Up
ACPR
Efficiency
-30
60
40
-40 20
-50
32
36 40 44 48
Output Power (dBm)
c262157sh-gr5
0
52
Data Sheet
3 of 10
Rev. 03.1, 2016-06-21


3Pages


PTFC262157FH 電子部品, 半導体
PTFC262157FH
Data Sheet
6 of 10
Rev. 03.1, 2016-06-21

6 Page



ページ 合計 : 10 ページ
 
PDF
ダウンロード
[ PTFC262157FH データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
PTFC262157FH

Thermally-Enhanced High Power RF LDMOS FET

Infineon
Infineon


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap