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PTFC262808SV の電気的特性と機能

PTFC262808SVのメーカーはInfineonです、この部品の機能は「Thermally-Enhanced High Power RF LDMOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 PTFC262808SV
部品説明 Thermally-Enhanced High Power RF LDMOS FET
メーカ Infineon
ロゴ Infineon ロゴ 




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PTFC262808SV Datasheet, PTFC262808SV PDF,ピン配置, 機能
PTFC262808SV
Thermally-Enhanced High Power RF LDMOS FET
280 W, 28 V, 2620 – 2690 MHz
Description
The PTFC262808SV is a 280-watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 2620 to
2690 MHz frequency band. Features include input and output match-
ing, high gain and thermally-enhanced package. Manufactured with
Infineon's advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PTFC262808SV
Package H-37275G-6/2
with formed leads
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
19 40
18 Gain
17
35
30
16 25
Efficiency
15 20
14 15
13
c262808sv-gr1
10
38 40 42 44 46 48 50 52
Output Power (dBm)
Features
• Broadband internal matching
• Typical CW pulsed performance, 2620 MHz, 28 V
- Output power at P1dB = 280 W
- Efficiency = 52%
- Gain = 18 dB
• Typical 1-carrier WCDMA performance, 2655 MHz,
28 V
- Output power at P1dB = 56 W avg.
- Efficiency = 24%
- Gain = 18.0 dB
• Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• RoHS-compliant
• Capable of handling 10:1 VSWR at 28 V, 280 W
(CW) ouput power
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon production test fixture)
VDD = 28 V, IDQ = 1800 mA, POUT = 56 W average, ƒ = 2655 MHz, 3GPP WCDMA signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
ηD
ACPR
16.5 18.0
22 24
— –33
–30
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02.1, 2013-08-02

1 Page





PTFC262808SV pdf, ピン配列
PTFC262808SV
Typical Performance (data taken in a reference design fixture)
Pulsed CW Performance
(gain and input return loss)
VDD = 28 V, IDQ = 650 mA
19 0
-5
18 IRL -10
-15
17 -20
-25
16
Gain
-30
-35
15
c262808sv-gr7
-40
2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
Pulsed CW Performance
VDD = 28 V, IDQ = 1.8 A
20 60
19 50
18 Gain
40
17 30
16
Efficiency
15
44 46 48
2620 MHz
2655 MHz
2690 MHz
50 52 54
20
c262808s v-gr5
10
56
Output Power (dBm)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1800 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
2620 MHz
-25 2655 MHz
2690 MHz
-30
-35
-40 IMD Up
IMD Low
-45
c262808sv-gr3
38 40 42 44 46 48 50 52
Output Power (dBm)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
IM3L
-25 IM3U
ACPR
-30 Eff
-35
40
35
30
25
-40 20
-45 15
-50
38
40 42 44 46 48
Output Power (dBm)
50
c262808sv-gr2
10
52
Data Sheet
3 of 8
Rev. 02.1, 2013-08-02


3Pages


PTFC262808SV 電子部品, 半導体
PTFC262808SV
Reference Circuit (cont.)
Component Information (cont.)
Component
Description
Input (cont.)
R103, R104
Resistor, 10 Ω
R107, R109
Resistor, 0.0 Ω
R108
Resistor, 0.0 Ω
R801
Resistor, 1 Ω
R802
Resistor, 1k Ω
R803
Resistor, 1.3k Ω
R804
Resistor, 1.2k Ω
S1 Potentiometer, 2k Ω
S2 Transistor
S3 Voltage regulator
Output
C201, C204
Chip capacitor, 0.2 pF
C202, C206, C207, C208, Capacitor, 10 µF
C209, C210
C203, C212
Chip capacitor, 18 pF
C205, C211
Capacitor, 220 µF, 35 V
Pinout Diagram
Suggested Manufacturer P/N
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Bourns Inc.
Infineon Technologies
Fairchild Semiconductor
ERJ-8GEYJ100V
ERJ-8GEY0R00V
ERJ-3GEY0R00V
ERJ-8GEYJ1R0V
ERJ-8GEYJ102V
ERJ-3GEYJ132V
ERJ-3GEYJ122V
3224W-1-202E
BCP56-10
LM7805
ATC
Taiyo Yuden
ATC100B0R2BW150X
UMK325C7106MM-T
ATC
Panasonic Electronic Components
ATC800A180JW250X
EEE-FP1V221AP
V1
D1
G1
V2
D2
S
G2
H-34275G-6-2_gw_pd_10-10-2012
Pin
V1, V2
G1, G2
D1, D2
S
Description
VDD
Gate
Drain
Source (flange)
Data Sheet
6 of 8
Rev. 02.1, 2013-08-02

6 Page



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部品番号部品説明メーカ
PTFC262808SV

Thermally-Enhanced High Power RF LDMOS FET

Infineon
Infineon


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